发明授权
- 专利标题: Resist composition and patterning process using the same
- 专利标题(中): 抗蚀剂组成和图案化工艺使用相同
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申请号: US11702658申请日: 2007-02-06
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公开(公告)号: US07745094B2公开(公告)日: 2010-06-29
- 发明人: Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
- 申请人: Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2006-035111 20060213
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F7/004 ; G03F7/075
摘要:
A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
公开/授权文献
- US20070190457A1 Resist composition and patterning process using the same 公开/授权日:2007-08-16
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