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公开(公告)号：US20070190457A1
公开(公告)日：2007-08-16
申请号：US11702658
申请日：2007-02-06
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/114
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。
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公开(公告)号：US07651829B2
公开(公告)日：2010-01-26
申请号：US10854568
申请日：2004-05-26
CPC分类号： G03F7/0045 , G03F7/0757 , Y10S430/143
摘要： Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.
摘要翻译： 本发明提供了正电阻材料，特别是具有比常规正性抗蚀剂材料更高的灵敏度，更高分辨率，更高的曝光宽容度和更好的工艺适应性的化学放大的正性抗蚀剂材料，并且在曝光之后提供良好的图案轮廓，特别是具有减小的线边缘粗糙度 并具有优异的耐蚀刻性。 这些材料可以优选含有有机溶剂和酸产生剂，更优选含有溶解抑制剂或碱性化合物和/或表面活性剂。 提供一种正性抗蚀剂材料，其包含包含选自由下式（1）表示的单体单元（A），单体单元（B）和单体单元（C））组成的组中的至少一种单体单元的聚合物; 玻璃化转变温度（Tg）为100℃以上。
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公开(公告)号：US20060040206A1
公开(公告)日：2006-02-23
申请号：US11205980
申请日：2005-11-04
IPC分类号： G03C1/76
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
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公开(公告)号：US07745094B2
公开(公告)日：2010-06-29
申请号：US11702658
申请日：2007-02-06
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/114
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。
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公开(公告)号：US07550247B2
公开(公告)日：2009-06-23
申请号：US11205980
申请日：2005-08-18
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过在近邻碳原子上含有具有羟基并且具有至少3个氟原子的有机基团的三种硅烷单体的混合物的共水解缩合获得，所述有机基团具有羧基被保护的有机基团 酸不稳定基团和含内酯环的有机基团。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。
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6.发明授权Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing 有权倍半硅氧烷复合混合物，可水解硅烷化合物，制备方法，抗蚀剂组合物，图案化工艺和基材加工公开(公告)号：US08153836B2
公开(公告)日：2012-04-10
申请号：US11860872
申请日：2007-09-25
CPC分类号： G03F7/0757 , C08G77/045 , C08G77/06 , G03F7/0397 , Y10S430/106
摘要： In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.
摘要翻译： 在包含具有包含硅原子和降冰片烷骨架之间的直接键合并具有大致100％的缩合度的侧链的倍半硅氧烷单元的硅倍半氧烷化合物的混合物中，远离硅键合侧的降冰片烷骨架的二亚甲基链是 被除了氢以外的至少一个取代基取代，并且在外显位置上在二亚甲基链上具有较大取代基的异构体以更高的比例存在。
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公开(公告)号：US20070190458A1
公开(公告)日：2007-08-16
申请号：US11703681
申请日：2007-02-08
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046 , G03F7/0392
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a norbornane group having hexafluoroisopropyl alcohol, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过含有具有六氟异丙醇的降冰片烷基的三种硅烷单体，具有由酸不稳定基团保护的羧基的有机基团和含内酯环的有机基团的混合物的共水解缩合而获得。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。
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8.发明申请Radiation-sensitive polymer composition and pattern forming method using the same 审中-公开辐射敏感聚合物组合物和使用其的图案形成方法公开(公告)号：US20050079443A1
公开(公告)日：2005-04-14
申请号：US10959200
申请日：2004-10-07
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0757
摘要： Provided is a silicon-containing positive photoresist which exhibits high resolution capacity when exposed to radiation having a wavelength of 300 nm or less, especially KrF (248 nm) or ArF (193 nm), which has excellent dry etching resistance and which can be developed with an aqueous alkali solution. Provided is a radiation sensitive polymer composition comprising (A) a polysiloxane compound which comprises at least one structural unit represented by formula (1) having an acid-dissociable group, and at least one structural unit represented by formula (2) comprising at least one fluorine atom; which is alkali insoluble or alkali sparingly soluble but becomes alkali soluble when the acid-dissociable group dissociates; and which has an average fluorine atom content of more than 2 wt % but not more than 11 wt %; (B) an acid generator; and (C) a basic compound.
摘要翻译： 提供了当暴露于波长为300nm以下的辐射，特别是KrF（248nm）或ArF（193nm）的辐射下显示出高分辨能力的含硅正性光致抗蚀剂，其具有优异的耐干蚀刻性并且可以显影 与碱性水溶液。 提供一种辐射敏感性聚合物组合物，其包含（A）聚硅氧烷化合物，其包含至少一个具有酸解离基团的式（1）表示的结构单元和至少一个由式（2）表示的结构单元，所述结构单元包含至少一个 氟原子 当碱解离基团解离时，它是碱不溶性或碱溶性弱但变得碱溶性; 并且其平均氟原子含量大于2重量％但不大于11重量％; （B）酸发生剂; 和（C）碱性化合物。
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公开(公告)号：US08129100B2
公开(公告)日：2012-03-06
申请号：US12418090
申请日：2009-04-03
申请人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
CPC分类号： G03F7/0035 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
摘要翻译： 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影 用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB， 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。
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公开(公告)号：US07510816B2
公开(公告)日：2009-03-31
申请号：US11242270
申请日：2005-10-04
申请人： Katsuya Takemura , Kazumi Noda , Youichi Ohsawa
发明人： Katsuya Takemura , Kazumi Noda , Youichi Ohsawa
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.
摘要翻译： 提供了包含聚硅氧烷，特定酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 抗蚀剂组合物具有高分辨率的性能，而不存在T形顶部轮廓的问题，并且适用于使用ArF曝光的双层抗蚀剂工艺。
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