发明授权
- 专利标题: Impurity control in HDP-CVD DEP/ETCH/DEP processes
- 专利标题(中): HDP-CVD DEP / ETCH / DEP工艺中的杂质控制
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申请号: US12204523申请日: 2008-09-04
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公开(公告)号: US07745350B2公开(公告)日: 2010-06-29
- 发明人: Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- 申请人: Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Townsend and Townsend and Crew
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/3065
摘要:
Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.
公开/授权文献
- US20090068853A1 IMPURITY CONTROL IN HDP-CVD DEP/ETCH/DEP PROCESSES 公开/授权日:2009-03-12