发明授权
- 专利标题： Multi-component doping of copper seed layer
- 专利标题（中）： 铜种子层的多组分掺杂
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申请号： US11445690申请日： 2006-06-02
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公开(公告)号： US07749361B2公开(公告)日： 2010-07-06
- 发明人: Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
- 申请人： Jie Chen , Peijun Ding , Suraj Rengarajan , Ling Chen , Tram Vo
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Law Offices of Charles Guenzer
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.
公开/授权文献
- US20070278089A1 Multi-component doping of copper seed layer 公开/授权日：2007-12-06
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