公开(公告)号：US07749361B2

公开(公告)日：2010-07-06

申请号：US11445690

申请日：2006-06-02

申请人： Jie Chen ,  Peijun Ding ,  Suraj Rengarajan ,  Ling Chen ,  Tram Vo

发明人： Jie Chen ,  Peijun Ding ,  Suraj Rengarajan ,  Ling Chen ,  Tram Vo

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C23C14/046 ,  C23C14/165

摘要： A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.

摘要翻译： 一种溅射铜籽晶层的方法及其使用的靶。 包括在溅射靶中的铜包括与铜反应的第一掺杂物和不与铜反应的第二掺杂物。 第一掺杂剂的实例包括Ti，Mg和Al。 第二掺杂剂的实例包括Pd，Sn，In，Ir和Ag。 可以通过测试电迁移来测试应力迁移和第二掺杂剂的量来确定第一掺杂剂的量。

公开(公告)号：US20070278089A1

公开(公告)日：2007-12-06

申请号：US11445690

申请日：2006-06-02

申请人： Jie Chen ,  Peijun Ding ,  Suraj Rengarajan ,  Ling Chen ,  Tram Vo

发明人： Jie Chen ,  Peijun Ding ,  Suraj Rengarajan ,  Ling Chen ,  Tram Vo

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/3414 ,  C23C14/046 ,  C23C14/165

摘要： A method of sputtering a copper seed layer and the target used therewith. The copper included in the sputtering target includes a first dopant reactive with copper and a second dopant unreactive with copper. Examples of the first dopant include Ti, Mg, and Al. Examples of the second dopant include Pd, Sn, In, Ir, and Ag. The amount of the first dopant may be determined by testing stress migration and that of the second dopant by testing electromigration.

摘要翻译： 一种溅射铜籽晶层的方法及其使用的靶。 包括在溅射靶中的铜包括与铜反应的第一掺杂物和不与铜反应的第二掺杂物。 第一掺杂剂的实例包括Ti，Mg和Al。 第二掺杂剂的实例包括Pd，Sn，In，Ir和Ag。 可以通过测试电迁移来测试应力迁移和第二掺杂剂的量来确定第一掺杂剂的量。

公开(公告)号：US06313033B1

公开(公告)日：2001-11-06

申请号：US09362923

申请日：1999-07-27

申请人： Tony Chiang ,  Bingxi Sun ,  Suraj Rengarajan ,  Peijun Ding ,  Barry Chin

发明人： Tony Chiang ,  Bingxi Sun ,  Suraj Rengarajan ,  Peijun Ding ,  Barry Chin

IPC分类号： H01L2144

CPC分类号： H01L27/1087 ,  H01L21/2855 ,  H01L21/76843 ,  H01L28/40 ,  H01L28/56 ,  H01L28/75

摘要： The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof.

摘要翻译： 本发明提供一种形成微电子器件的方法，包括：形成第一电极; 使用高密度等离子体物理气相沉积在第一电极上沉积粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合，将介电层沉积在 粘合层; 以及在所述电介质层上形成第二电极。 本发明还提供了一种微电子器件，包括：第一电极; 第二电极; 设置在所述第一和第二电极之间的电介质层; 以及设置在第一电极和电介质层之间的粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US07687909B2

公开(公告)日：2010-03-30

申请号：US11809153

申请日：2007-05-30

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L23/48

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.

摘要翻译： 用于半导体器件应用的金属/金属氮化物阻挡层。 阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

公开(公告)号：US07253109B2

公开(公告)日：2007-08-07

申请号：US11069348

申请日：2005-02-28

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L21/44

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。 此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US20050255691A1

公开(公告)日：2005-11-17

申请号：US11184615

申请日：2005-07-19

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US20050208767A1

公开(公告)日：2005-09-22

申请号：US11069348

申请日：2005-02-28

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。 此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US06911124B2

公开(公告)日：2005-06-28

申请号：US10246316

申请日：2002-09-17

申请人： Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Peijun Ding

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Peijun Ding

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/54 ,  C23C14/58 ,  H01L21/285 ,  H01L21/318 ,  H01L21/768 ,  C23C14/34 ,  H05H1/24

CPC分类号： H01L21/2855 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供约大约至大约厚厚的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。 此外，Ta N N种子层在30μm范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US07014887B1

公开(公告)日：2006-03-21

申请号：US09388989

申请日：1999-09-02

申请人： Barney M. Cohen ,  Suraj Rengarajan ,  Xiangbing Li ,  Kenny King-Tai Ngan ,  Peijun Ding

发明人： Barney M. Cohen ,  Suraj Rengarajan ,  Xiangbing Li ,  Kenny King-Tai Ngan ,  Peijun Ding

IPC分类号： B05D3/06 ,  B08B7/00 ,  C23C14/02 ,  H05H1/46 ,  H01L21/3205

CPC分类号： C23C14/022 ,  B08B7/0035 ,  H01J37/321 ,  H01L21/02063 ,  H01L21/2855 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843

摘要： The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture. The invention also provides cleaning the patterned dielectric layer in a processing chamber with a first plasma consisting essentially of argon, wherein the first plasma is generated by supplying power to a coil surrounding the processing chamber and supplying bias to a substrate support member supporting the substrate, cleaning the patterned dielectric layer in the processing chamber with a second plasma consisting essentially of hydrogen and helium, wherein the second plasma is generated by increasing the supply of power to the coil surrounding the processing chamber and reducing the supply of bias to the substrate support member supporting the substrate, depositing a barrier layer on the patterned dielectric layer after exposing the dielectric layer to the first plasma and the second plasma, and depositing a metal on the barrier layer. Furthermore, the sequential plasma treatments can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, etch chambers, and other plasma processing chambers.

摘要翻译： 本发明通常提供了一种改善沉积在图案化电介质层上的金属的填充和电性能的方法。 蚀刻图案化电介质层中诸如过孔和沟槽的孔，以增强填充，然后在相同的室中进行清洗以减少孔内的金属氧化物。 本发明还提供了在具有基本上由氩组成的第一等离子体的处理室中清洁图案化的介电层，其中通过向围绕处理室的线圈供电并且向支撑衬底的衬底支撑构件提供偏压来产生第一等离子体， 用基本上由氢和氦组成的第二等离子体清洁处理室中的图案化电介质层，其中通过增加对处理室周围的线圈的功率供给并减少对衬底支撑构件的偏压供应来产生第二等离子体 支撑衬底，在将介电层暴露于第一等离子体和第二等离子体之后，在图案化的介电层上沉积阻挡层，以及在阻挡层上沉积金属。 此外，顺序等离子体处理可以在包括预清洁室，物理气相沉积室，蚀刻室和其它等离子体处理室的综合工艺顺序的各种等离子体处理室中实施。