发明授权
US07749396B2 Method of manufacturing fine features for thin film transistors 有权
制造薄膜晶体管精细特征的方法

Method of manufacturing fine features for thin film transistors
摘要:
A process for fabricating fine features such as small gate electrodes on a transistor. The process involves the jet-printing of a mask and the plating of a metal to fabricate sub-pixel and standard pixel size features in one layer. Printing creates a small sub-pixel size gap mask for plating a fine feature. A second printed mask may be used to protect the newly formed gate and etch standard pixel size lines connecting the small gates.
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