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    Method of manufacturing fine features for thin film transistors
    1.
    发明授权
    Method of manufacturing fine features for thin film transistors 有权
    制造薄膜晶体管精细特征的方法

    公开(公告)号：US07749396B2

    公开(公告)日：2010-07-06

    申请号：US11388731

    申请日：2006-03-24

    申请人： Eugene M. Chow ,  William S. Wong ,  Michael Chabinyc ,  Ana Claudia Arias

    发明人： Eugene M. Chow ,  William S. Wong ,  Michael Chabinyc ,  Ana Claudia Arias

    IPC分类号： H01B13/00 ,  C23F1/00

    CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1292

    摘要： A process for fabricating fine features such as small gate electrodes on a transistor. The process involves the jet-printing of a mask and the plating of a metal to fabricate sub-pixel and standard pixel size features in one layer. Printing creates a small sub-pixel size gap mask for plating a fine feature. A second printed mask may be used to protect the newly formed gate and etch standard pixel size lines connecting the small gates.

    摘要翻译： 一种在晶体管上制造诸如小栅电极的精细特征的工艺。 该方法涉及一种掩模的喷墨印刷和金属镀层，以在一层中制造亚像素和标准像素尺寸特征。 打印创建一个小的子像素大小的间隙掩模，用于电镀精细特征。 可以使用第二印刷掩模来保护新形成的栅极并蚀刻连接小栅极的标准像素尺寸线。

    Method using monolayer etch masks in combination with printed masks
    2.
    发明授权
    Method using monolayer etch masks in combination with printed masks 失效
    使用单层蚀刻掩模与印刷掩模组合的方法

    公开(公告)号：US07524768B2

    公开(公告)日：2009-04-28

    申请号：US11388718

    申请日：2006-03-24

    申请人： Eugene M. Chow ,  William S. Wong ,  Michael Chabinyc ,  Jeng Ping Lu ,  Ana Claudia Arias

    发明人： Eugene M. Chow ,  William S. Wong ,  Michael Chabinyc ,  Jeng Ping Lu ,  Ana Claudia Arias

    IPC分类号： H01L21/302

    CPC分类号： H01L21/302 ,  H01L21/0271 ,  H01L21/0273 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66765

    摘要： A method to pattern films into dimensions smaller than the printed pixel mask size. A printed mask is deposited on a thin film on a substrate. The second mask layer is selectively deposited onto the film, but not to the printed mask. A third mask is then printed onto the substrate to pattern a portion of the second mask. Certain solvents are then used to remove the printed mask but not the mask layer on the thin film. The mask layer is then used to form a pattern on the thin film in combination with etching. The features formed in the thin film are smaller than the smallest dimension of the printed mask. The coated mask layer can be a self-assembled mono-layer or other material that selectively binds to the thin film.

    摘要翻译： 将薄膜图案尺寸小于印刷像素掩模尺寸的方法。 印刷的掩模沉积在基底上的薄膜上。 第二掩模层选择性地沉积在膜上，而不是印刷在掩模上。 然后将第三掩模印刷到基底上以对第二掩模的一部分进行图案化。 然后使用某些溶剂去除印刷的掩模，而不是薄膜上的掩模层。 然后将掩模层与蚀刻结合在薄膜上形成图案。 形成在薄膜中的特征小于印刷掩模的最小尺寸。 涂覆的掩模层可以是选择性地结合薄膜的自组装单层或其它材料。

    Method of forming a darkfield etch mask
    8.
    发明授权
    Method of forming a darkfield etch mask 失效
    形成暗场蚀刻掩模的方法

    公开(公告)号：US07384568B2

    公开(公告)日：2008-06-10

    申请号：US11394438

    申请日：2006-03-31

    申请人： William Wong ,  Scott Limb ,  Beverly Russo ,  Michael Chabinyc ,  Rene Lujan

    发明人： William Wong ,  Scott Limb ,  Beverly Russo ,  Michael Chabinyc ,  Rene Lujan

    IPC分类号： B44C1/22 ,  C03C25/68 ,  C03C15/00 ,  C23F1/00

    CPC分类号： B44C1/22 ,  H01L27/1292 ,  H01L29/4908

    摘要： Susceptibility of darkfield etch masks (majority of the mask area is opaque) to pinhole defects, transferred pattern, non-uniformity, etc. due to ejector dropout or drop misdirection, and long duty cycles due to large-area coverage, when using digital lithography (or print patterning) is addressed by using a clear-field print pattern that is then coated with etch resist material. The printed clear field pattern is selectively removed to form an inverse pattern (darkfield) within the coated resist layer. Etching then removes selected portions of an underlying (e.g., encapsulation, conductive, etc.) layer. Removal of the mask produces a layer with large-area features with substantially reduced defects.

    摘要翻译： 当使用数字光刻技术时，由于喷射器脱落或滴落错误方向，暗场蚀刻掩模（大部分掩模区域不透明）对针孔缺陷，转印图案，不均匀性等的敏感性以及由于大面积覆盖而造成的长占空比 （或印刷图案化）通过使用随后涂覆有抗蚀剂材料的透明场印刷图案来解决。 选择性地去除打印的清晰场图案以在涂覆的抗蚀剂层内形成反向图案（暗场）。 然后蚀刻去除底层（例如，封装，导电等）层的选定部分。 去除掩模产生具有大面积特征并具有显着减少的缺陷的层。

    Method using monolayer etch masks in combination with printed masks
    9.
    发明申请
    Method using monolayer etch masks in combination with printed masks 失效
    使用单层蚀刻掩模与印刷掩模组合的方法

    公开(公告)号：US20070221610A1

    公开(公告)日：2007-09-27

    申请号：US11388718

    申请日：2006-03-24

    申请人： Eugene Chow ,  William Wong ,  Michael Chabinyc ,  Jeng Lu ,  Ana Arias

    发明人： Eugene Chow ,  William Wong ,  Michael Chabinyc ,  Jeng Lu ,  Ana Arias

    IPC分类号： H01B13/00 ,  B44C1/22

    CPC分类号： H01L21/302 ,  H01L21/0271 ,  H01L21/0273 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/66765

    摘要： A method to pattern films into dimensions smaller than the printed pixel mask size. A printed mask is deposited on a thin film on a substrate. The second mask layer is selectively deposited onto the film, but not to the printed mask. A third mask is then printed onto the substrate to pattern a portion of the second mask. Certain solvents are then used to remove the printed mask but not the mask layer on the thin film. The mask layer is then used to form a pattern on the thin film in combination with etching. The features formed in the thin film are smaller than the smallest dimension of the printed mask. The coated mask layer can be a self-assembled mono-layer or other material that selectively binds to the thin film.

    摘要翻译： 将薄膜图案尺寸小于印刷像素掩模尺寸的方法。 印刷的掩模沉积在基底上的薄膜上。 第二掩模层选择性地沉积在膜上，而不是印刷在掩模上。 然后将第三掩模印刷到基底上以对第二掩模的一部分进行图案化。 然后使用某些溶剂去除印刷的掩模，而不是薄膜上的掩模层。 然后将掩模层与蚀刻结合在薄膜上形成图案。 形成在薄膜中的特征小于印刷掩模的最小尺寸。 涂覆的掩模层可以是选择性地结合薄膜的自组装单层或其它材料。

    Self-forming microlenses for VCSEL arrays
    10.
    发明申请
    Self-forming microlenses for VCSEL arrays 有权
    VCSEL阵列的自形成微透镜

    公开(公告)号：US20060131124A1

    公开(公告)日：2006-06-22

    申请号：US11015937

    申请日：2004-12-17

    申请人： Michael Chabinyc ,  Patrick Maeda ,  Christopher Chua

    发明人： Michael Chabinyc ,  Patrick Maeda ,  Christopher Chua

    IPC分类号： F16D43/18

    CPC分类号： B82Y30/00 ,  H01S5/0425 ,  H01S5/18388 ,  H01S5/423

    摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) assembly including a VCSEL structure having a light-emitting region located on its surface, a relatively wettable region of a surface modifier coating formed over the light emitting region, and a microlens formed on the relatively wettable region. A relatively non-wettable region of the surface modifier coating is formed around the light-emitting region (e.g., on the electrode surrounding the light-emitting region). The surface modifier coating is formed, for example, from one or more organothiols that change the surface energies of the light-emitting region and/or the electrode to facilitate self-assembly and self-registration of the microlens material. The microlens material is printed, microjetted, or dip coated onto the VCSEL structure such that the microlens material wets to the relatively wettable region, thereby forming a liquid bead that is reliably positioned over the light-emitting region. The liquid bead is then cured to form the microlens.

    摘要翻译： 包括具有位于其表面上的发光区域的VCSEL结构的垂直腔表面发射激光器（VCSEL）组件，形成在发光区域上的表面改性剂涂层的相对可润湿区域，以及形成在相对可润湿区域上的微透镜 。 在发光区域（例如，围绕发光区域的电极）周围形成表面改性剂涂层的相对不可润湿的区域。 表面改性剂涂层例如由一种或多种改变发光区域和/或电极的表面能的有机硫醇形成，以促进微透镜材料的自组装和自配准。 将微透镜材料印刷，微喷射或浸涂在VCSEL结构上，使得微透镜材料润湿到相对可润湿的区域，从而形成可靠地定位在发光区域上方的液体珠粒。 然后将液体珠固化以形成微透镜。