发明授权
- 专利标题： Semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
- 专利标题（中）： 半导体加工方法，形成接触焊盘的方法以及在含金属层之间形成电连接的方法
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申请号： US11639771申请日： 2006-12-15
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公开(公告)号： US07749885B2公开(公告)日： 2010-07-06
- 发明人: Tianhong Zhang , Akram Ditali
- 申请人： Tianhong Zhang , Akram Ditali
- 申请人地址： unknown Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： unknown Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material. The copper component may be a bond pad or an interconnect between two levels of metal layers. Some embodiments include semiconductor constructions in which nickel extends across a copper component, a copper barrier is laterally offset from the copper component, and an insulative material is between the copper barrier and the copper component.
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