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    Methods of forming a transistor gate
    6.
    发明授权
    Methods of forming a transistor gate 有权

    公开(公告)号：US07105411B1

    公开(公告)日：2006-09-12

    申请号：US09292132

    申请日：1999-04-14

    申请人： Salman Akram ,  Akram Ditali

    发明人： Salman Akram ,  Akram Ditali

    IPC分类号： H01L21/316

    CPC分类号： H01L21/265 ,  H01L21/28167 ,  H01L21/3115 ,  H01L29/512 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed in overlapping relation, with the gate having opposing edges and a center therebetween. At least one of chlorine or fluorine is concentrated in the gate oxide layer within the overlap more proximate at least one of the gate edges than the center. Preferably, the central region is substantially undoped with fluorine and chlorine. The chlorine and/or fluorine can be provided by forming sidewall spacers proximate the opposing lateral edges of the gate, with the sidewall spacers comprising at least one of chlorine or fluorine. The spacers are annealed at a temperature and for a time effective to diffuse the fluorine or chlorine into the gate oxide layer to beneath the gate. Transistors and transistor gates fabricated according to the above and other methods are disclosed. Further, a transistor includes a semiconductive material and a transistor gate having gate oxide positioned therebetween. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. First insulative spacers are formed proximate the gate edges, with the first insulative spacers being doped with at least one of chlorine or fluorine. Second insulative spacers formed over the first insulative spacers.

    Semiconductor processing method and field effect transistor
    7.
    发明申请
    Semiconductor processing method and field effect transistor 审中-公开
    半导体处理方法和场效应晶体管

    公开(公告)号：US20070020868A1

    公开(公告)日：2007-01-25

    申请号：US11519243

    申请日：2006-09-11

    申请人： Salman Akram ,  Akram Ditali

    发明人： Salman Akram ,  Akram Ditali

    IPC分类号： H01L21/336

    CPC分类号： H01L21/265 ,  H01L21/28167 ,  H01L21/3115 ,  H01L29/512 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed in overlapping relation, with the gate having opposing edges and a center therebetween. At least one of chlorine or fluorine is concentrated in the gate oxide layer within the overlap more proximate at least one of the gate edges than the center. Preferably, the central region is substantially undoped with fluorine and chlorine. The chlorine and/or fluorine can be provided by forming sidewall spacers proximate the opposing lateral edges of the gate, with the sidewall spacers comprising at least one of chlorine or fluorine. The spacers are annealed at a temperature and for a time effective to diffuse the fluorine or chlorine into the gate oxide layer to beneath the gate. Transistors and transistor gates fabricated according to the above and other methods are disclosed. Further, a transistor includes a semiconductive material and a transistor gate having gate oxide positioned therebetween. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. First insulative spacers are formed proximate the gate edges, with the first insulative spacers being doped with at least one of chlorine or fluorine. Second insulative spacers formed over the first insulative spacers.

    摘要翻译： 形成晶体管栅极的方法包括在半导体衬底上形成栅氧化层。 在栅氧化层内提供氯。 栅极形成在栅极氧化物层附近。 在另一种方法中，栅极和栅极氧化物层以重叠的关系形成，栅极具有相对的边缘和它们之间的中心。 氯或氟中的至少一个集中在栅极氧化物层内，重叠更靠近至少一个栅极边缘比中心。 优选地，中心区域用氟和氯基本上未掺杂。 可以通过在栅极的相对的侧边缘附近形成侧壁间隔来提供氯和/或氟，其中侧壁间隔物包括氯或氟中的至少一种。 间隔物在温度和时间有效地将氟或氯扩散到栅极氧化物层到栅极下方的温度下退火。 公开了根据上述方法制造的晶体管和晶体管栅极。 此外，晶体管包括半导体材料和栅极氧化物位于其间的晶体管栅极。 源极侧向靠近一个栅极边缘形成，并且漏极形成为横向靠近另一个栅极边缘。 在栅极边缘附近形成第一绝缘间隔物，其中第一绝缘隔离物掺杂有氯或氟中的至少一种。 第二绝缘垫片形成在第一绝缘垫片上。

    Semiconductor processing method and field effect transistor
    8.
    发明授权
    Semiconductor processing method and field effect transistor 有权
    半导体处理方法和场效应晶体管

    公开(公告)号：US07189623B2

    公开(公告)日：2007-03-13

    申请号：US11217561

    申请日：2005-08-31

    申请人： Salman Akram ,  Akram Ditali

    发明人： Salman Akram ,  Akram Ditali

    IPC分类号： H01L21/316 ,  H01L21/425 ,  H01L21/42 ,  H01L21/46 ,  H01L21/40

    CPC分类号： H01L21/28185 ,  H01L21/28167 ,  H01L21/28176 ,  H01L21/31629 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/512 ,  H01L29/6656 ,  H01L29/6659

    摘要： A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed in overlapping relation, with the gate having opposing edges and a center therebetween. At least one of chlorine or fluorine is concentrated in the gate oxide layer within the overlap more proximate at least one of the gate edges than the center. Preferably, the central region is substantially undoped with fluorine and chlorine. The chlorine and/or fluorine can be provided by forming sidewall spacers proximate the opposing lateral edges of the gate, with the sidewall spacers comprising at least one of chlorine or fluorine. The spacers are annealed at a temperature and for a time effective to diffuse the fluorine or chlorine into the gate oxide layer to beneath the gate. Transistors and transistor gates fabricated according to the above and other methods are disclosed. Further, a transistor includes a semiconductive material and a transistor gate having gate oxide positioned therebetween. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. First insulative spacers are formed proximate the gate edges, with the first insulative spacers being doped with at least one of chlorine or fluorine. Second insulative spacers formed over the first insulative spacers.

    摘要翻译： 形成晶体管栅极的方法包括在半导体衬底上形成栅氧化层。 在栅氧化层内提供氯。 栅极形成在栅极氧化物层附近。 在另一种方法中，栅极和栅极氧化物层以重叠的关系形成，栅极具有相对的边缘和它们之间的中心。 氯或氟中的至少一个集中在栅极氧化物层内，重叠更靠近至少一个栅极边缘比中心。 优选地，中心区域用氟和氯基本上未掺杂。 可以通过在栅极的相对的侧边缘附近形成侧壁间隔来提供氯和/或氟，其中侧壁间隔物包括氯或氟中的至少一种。 间隔物在温度和时间有效地将氟或氯扩散到栅极氧化物层到栅极下方的温度下退火。 公开了根据上述方法制造的晶体管和晶体管栅极。 此外，晶体管包括半导体材料和栅极氧化物位于其间的晶体管栅极。 源极侧向靠近一个栅极边缘形成，并且漏极形成为横向靠近另一个栅极边缘。 在栅极边缘附近形成第一绝缘间隔物，其中第一绝缘隔离物掺杂有氯或氟中的至少一种。 第二绝缘间隔件形成在第一绝缘间隔件上。

    Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor
    9.
    发明授权
    Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor 有权
    形成多注入轻掺杂漏极（MILDD）场效应晶体管的方法

    公开(公告)号：US5998274A

    公开(公告)日：1999-12-07

    申请号：US172439

    申请日：1998-10-14

    申请人： Salman Akram ,  Akram Ditali

    发明人： Salman Akram ,  Akram Ditali

    IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/265

    CPC分类号： H01L29/6659 ,  H01L29/6656 ,  H01L29/7833

    摘要： A multiple implant lightly doped drain ("MILDD") field effect transistor is disclosed. The transistor includes a channel, a gate, a dielectric structure that separates the gate from the channel, a source region and a drain region. The drain region has a first drain subregion, a second drain subregion and a third drain subregion. Each drain subregion has a dopant concentration that differs from that of the other two drain subregions. A method of forming the same is also disclosed.

    摘要翻译： 公开了多种注入轻掺杂漏极（“MILDD”）场效应晶体管。 晶体管包括沟道，栅极，将栅极与沟道分离的电介质结构，源极区和漏极区。 漏极区域具有第一漏极子区域，第二漏极子区域和第三漏极子区域。 每个漏极子区域的掺杂剂浓度与其他两个漏极区域的掺杂浓度不同。 还公开了其形成方法。

    Field effect transistor having improved hot carrier immunity
    10.
    发明授权
    Field effect transistor having improved hot carrier immunity 有权
    具有改善的热载体抗扰性的场效应晶体管

    公开(公告)号：US06288433B1

    公开(公告)日：2001-09-11

    申请号：US09648008

    申请日：2000-08-21

    申请人： Salman Akram ,  Akram Ditali

    发明人： Salman Akram ,  Akram Ditali

    IPC分类号： H01L2976

    CPC分类号： H01L21/28185 ,  H01L21/28167 ,  H01L21/28176 ,  H01L21/31629 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/512 ,  H01L29/6656 ,  H01L29/6659

    摘要： One aspect of the invention provides a transistor including semiconductive material and a transistor gate having gate oxide positioned therebetween. The gate has opposing gate edges and a central region therebetween, and the gate oxide has opposing edges substantially laterally aligned with the opposing gate edges. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. At least one of fluorine or chlorine is concentrated in the gate oxide layer between the semiconductive material and the transistor gate more proximate at least one of the gate edges than the central region. Another aspect of the invention provides a transistor comprising semiconductive material and a transistor gate having gate oxide positioned therebetween. The gate has opposing gate edges and a central region therebetween, and the gate oxide has opposing edges substantially laterally aligned with the opposing gate edges. A source is formed laterally proximate one of the gate edges and a drain is formed laterally proximate the other of the gate edges. At least one of fluorine or chlorine is concentrated in the gate oxide layer between the semiconductive material and the transistor gate more proximate at least one of the gate edges than the central region.

    摘要翻译： 本发明的一个方面提供一种晶体管，其包括半导体材料和晶体管栅极，栅极氧化物位于它们之间。 栅极具有相对的栅极边缘和它们之间的中心区域，并且栅极氧化物具有与相对的栅极边缘基本上横向对准的相对边缘。 源极侧向靠近一个栅极边缘形成，并且漏极形成为横向靠近另一个栅极边缘。 氟或氯中的至少一种在半导体材料和晶体管栅极之间的栅极氧化物层中比在中心区域更靠近至少一个栅极边缘。 本发明的另一方面提供一种晶体管，其包括半导体材料和晶体管栅极，栅极氧化物位于它们之间。 栅极具有相对的栅极边缘和它们之间的中心区域，并且栅极氧化物具有与相对的栅极边缘基本上横向对准的相对边缘。 源极侧向靠近一个栅极边缘形成，并且漏极形成为横向靠近另一个栅极边缘。 氟或氯中的至少一种在半导体材料和晶体管栅极之间的栅极氧化物层中比在中心区域更靠近至少一个栅极边缘。