发明授权
US07750342B2 Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer
有权
绝缘有机聚合物,使用绝缘聚合物形成的有机绝缘层和包含该绝缘层的有机薄膜晶体管
- 专利标题: Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer
- 专利标题(中): 绝缘有机聚合物,使用绝缘聚合物形成的有机绝缘层和包含该绝缘层的有机薄膜晶体管
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申请号: US11655181申请日: 2007-01-19
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公开(公告)号: US07750342B2公开(公告)日: 2010-07-06
- 发明人: Joo Young Kim , Eun Kyung Lee , Sang-Yoon Lee , Bang Lin Lee
- 申请人: Joo Young Kim , Eun Kyung Lee , Sang-Yoon Lee , Bang Lin Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0089739 20060915
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01L51/00
摘要:
Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.
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