公开(公告)号：US20080067503A1

公开(公告)日：2008-03-20

申请号：US11655181

申请日：2007-01-19

申请人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L51/10 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

摘要： Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

摘要翻译： 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

公开(公告)号：US07646014B2

公开(公告)日：2010-01-12

申请号：US11606287

申请日：2006-11-30

申请人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L35/24

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

摘要： Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

摘要翻译： 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源/漏电极和有机半导体层之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和Ion / Ioff比。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US07364940B2

公开(公告)日：2008-04-29

申请号：US11296704

申请日：2005-12-08

申请人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

发明人： Joo Young Kim ,  Eun Kyung Lee ,  Bang Lin Lee ,  Bon Won Koo ,  Hyun Jung Park ,  Sang Yoon Lee

IPC分类号： H01L51/40

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/3127 ,  H01L21/31691 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

摘要翻译： 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。 此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

公开(公告)号：US07829373B2

公开(公告)日：2010-11-09

申请号：US11270472

申请日：2005-11-10

申请人： Eun Kyung Lee ,  Joo Young Kim ,  Bang Lin Lee ,  Sang-Yoon Lee ,  Eun Jeong Jeong

发明人： Eun Kyung Lee ,  Joo Young Kim ,  Bang Lin Lee ,  Sang-Yoon Lee ,  Eun Jeong Jeong

IPC分类号： H01L51/00 ,  C08G61/12

CPC分类号： H01L51/0036 ,  C08G61/122 ,  C08G61/126 ,  H01L51/0035 ,  H01L51/0545

摘要： Disclosed herein is an organic polymer semiconductor compound, a method of forming an organic polymer semiconductor thin film using the same, and an organic thin film transistor using the same. Example embodiments of this invention pertain to an organic polymer semiconductor having a side chain including a removable substituent, and to an organic thin film transistor using the organic polymer semiconductor for an organic active layer, which has lower leakage current, higher charge mobility, and/or a higher on/off ratio.

摘要翻译： 本文公开了有机聚合物半导体化合物，使用其的有机聚合物半导体薄膜的形成方法和使用其的有机高分子半导体薄膜晶体管。 本发明的示例性实施方案涉及具有包含可除去取代基的侧链的有机聚合物半导体以及使用有机有机层的有机聚合物半导体的有机薄膜晶体管，其具有较低的漏电流，较高的电荷迁移率和/ 或更高的开/关比。

公开(公告)号：US07750342B2

公开(公告)日：2010-07-06

申请号：US11655181

申请日：2007-01-19

申请人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

摘要： Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

摘要翻译： 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

公开(公告)号：US20070194305A1

公开(公告)日：2007-08-23

申请号：US11606287

申请日：2006-11-30

申请人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

发明人： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

摘要： Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

摘要翻译： 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源极/漏极之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

公开(公告)号：US08154016B2

公开(公告)日：2012-04-10

申请号：US13067100

申请日：2011-05-09

申请人： Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

发明人： Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

IPC分类号： C08F28/06 ,  H01L51/00

CPC分类号： C07D417/04 ,  C07D417/14 ,  C07D421/14 ,  H01L51/0036 ,  H01L51/0512 ,  Y02E10/549

摘要： Disclosed herein is a composition containing hetero arylene or arylene showing a p-type semiconductor property in addition to thiophene showing a p-type semiconductor property and thiazole rings showing a n-type semiconductor property at a polymer main chain, an organic semiconductor polymer containing the composition, an organic active layer containing the organic semiconductor polymer, an organic thin film transistor (OTFT) containing the organic active layer, an electronic device containing the OTFT, and a method of preparing the same. The composition of example embodiments, which is used in an organic semiconductor polymer and contains thiazole rings, may exhibit increased solubility to an organic solvent, coplanarity, processability and an improved thin film property.

摘要翻译： 本文公开了含有异亚芳基或亚芳基的组合物，除了显示p型半导体性质的噻吩外还显示p型半导体性质，在聚合物主链上显示出n型半导体性质的噻唑环，含有 含有有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管（OTFT），含OTFT的电子器件及其制备方法。 用于有机半导体聚合物并含有噻唑环的示例性实施方案的组合物可以表现出对有机溶剂的增加的溶解性，共面性，可加工性和改善的薄膜性质。

公开(公告)号：US20070166871A1

公开(公告)日：2007-07-19

申请号：US11508925

申请日：2006-08-24

申请人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

发明人： Eun Jeong Jeong ,  Joo Young Kim ,  Hyun Sik Moon ,  Bang Lin Lee ,  Kook Min Han ,  Eun Kyung Lee

IPC分类号： H01L51/40 ,  C07D417/14 ,  C07D497/14

CPC分类号： C07D495/04 ,  C07D417/14 ,  H01L51/0545 ,  H01L51/5048

摘要： Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.

摘要翻译： 本文公开了NPN型低分子芳环化合物，由这些化合物形成的有机半导体层，其表现出改进的电稳定性，并且使用基于溶液的方法形成这种层的方法，例如在室温或室温附近进行的旋涂方法。 这些NPN型化合物可以单独或组合地用于制造电子器件中的有机半导体层。 根据示例性实施方案的NPN型芳环化合物可以作为溶液沉积在一系列基底上以形成涂膜，然后对其进行热处理以在跨越大的衬底表面形成半导体薄膜，该衬底表面具有减小的漏电流 相对于常规PNP型有机半导体材料，从而改善所得器件的电性能。

公开(公告)号：US20080076872A1

公开(公告)日：2008-03-27

申请号：US11706985

申请日：2007-02-16

申请人： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

发明人： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

IPC分类号： C08L41/00

CPC分类号： C08L65/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

摘要： Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

摘要翻译： 示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物 有机半导体薄膜的形成，从而增加pi-pi堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用该薄膜的有机电子器件。 使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

公开(公告)号：US08008426B2

公开(公告)日：2011-08-30

申请号：US12078952

申请日：2008-04-08

申请人： Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

发明人： Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC分类号： C08G75/00

CPC分类号： H01L51/0043 ,  C08G61/122 ,  C08G61/123 ,  C08G61/126 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0069 ,  H01L51/0076 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

摘要： Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor.

摘要翻译： 示例性实施方案涉及其中具有液晶性质的熔融噻吩和具有N型半导体性质的芳族化合物的有机半导体聚合物交替包含在聚合物的主链中，有机活性层，有机薄膜晶体管（OTFT） 以及包含该有机半导体聚合物的电子器件以及制备有机半导体聚合物的方法，以及制造有机活性层，OTFT和使用其的电子器件。 该有机半导体聚合物具有改善的有机溶剂溶解性，加工性和薄膜性质，并且当施加到有机薄膜晶体管的沟道层时，可以赋予增加的电荷迁移率和降低的截止状态漏电流。