发明授权
US07754512B2 Method of fabricating semiconductor light-emitting devices with isolation trenches 失效
制造具有隔离沟槽的半导体发光器件的方法

Method of fabricating semiconductor light-emitting devices with isolation trenches
摘要:
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
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