发明授权
- 专利标题: Method of fabricating semiconductor light-emitting devices with isolation trenches
- 专利标题(中): 制造具有隔离沟槽的半导体发光器件的方法
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申请号: US11119805申请日: 2005-05-03
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公开(公告)号: US07754512B2公开(公告)日: 2010-07-13
- 发明人: Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
- 申请人: Masumi Taninaka , Hiroyuki Fujiwara , Susumu Ozawa , Masaharu Nobori
- 申请人地址: JP Tokyo
- 专利权人: Oki Data Corporation
- 当前专利权人: Oki Data Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2002-085530 20020326
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/00 ; H01L33/08
摘要:
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
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