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1.发明授权Method of fabricating semiconductor light-emitting devices with isolation trenches 失效制造具有隔离沟槽的半导体发光器件的方法公开(公告)号：US07754512B2
公开(公告)日：2010-07-13
申请号：US11119805
申请日：2005-05-03
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译： 根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。 该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。 沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。
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公开(公告)号：US06858875B2
公开(公告)日：2005-02-22
申请号：US10630936
申请日：2003-07-31
IPC分类号： H01L23/12 , B41J2/45 , H01L27/15 , H01L33/08 , H01L33/30 , H01L33/48 , H01L33/00 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer into a first region and a remaining region, and divides the array of light-emitting elements into segments disposed alternately in these two regions, each segment preferably including one or two light-emitting elements. A first shared interconnecting pad is electrically coupled to the light-emitting elements in the first region by electrical paths not crossing the isolation trench. A second shared interconnecting pad is electrically coupled to light-emitting elements in the remaining semiconductor region by electrical paths crossing the isolation trench. The array can then be driven by a number of separate interconnecting pads equal to half the number of the light-emitting elements.
摘要翻译： 发光元件阵列具有形成在电流阻挡层上的半导体层。 通过不同导电类型的杂质的扩散在半导体层中形成发光元件。 隔离沟槽将半导体层划分成第一区域和剩余区域，并且将发光元件阵列分成交替布置在这两个区域中的区段，每个区段优选地包括一个或两个发光元件。 第一共享互连焊盘通过不穿过隔离沟槽的电路径电耦合到第一区域中的发光元件。 第二共享互连焊盘通过穿过隔离沟槽的电路径电耦合到剩余半导体区域中的发光元件。 阵列然后可以由等于发光元件数量的一半的多个单独的互连焊盘驱动。
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公开(公告)号：US06781246B2
公开(公告)日：2004-08-24
申请号：US10631893
申请日：2003-08-01
IPC分类号： H01L2348
CPC分类号： B41J2/45 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： An array of semiconductor circuit elements such as light-emitting elements includes a semiconductor layer partially covered by a dielectric film. A first interconnecting pad such as a wire-bonding pad is electrically coupled by conductive paths passing through the semiconductor layer to electrodes of a first group of semiconductor circuit elements formed in the semiconductor layer. A second interconnecting pad such as a wire-bonding pad, formed on the dielectric film, is electrically coupled to electrodes of a second group of semiconductor circuit elements formed in the semiconductor layer by conductive paths insulated from the semiconductor layer by the dielectric film. The second conductive paths cross the first conductive paths at points at which the first conductive paths pass through the semiconductor layer, so that only a single layer of metal interconnecting lines is needed.
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公开(公告)号：US06211537B1
公开(公告)日：2001-04-03
申请号：US09040450
申请日：1998-03-18
IPC分类号： H01L3300
CPC分类号： B41J2/45 , H01L27/153 , H01L33/0008
摘要： A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.
摘要翻译： 可以在没有高精度掩模对准的情况下制造1200dpi的LED，并提供良好的光辐射效率。 第一层间电介质形成在半导体衬底上，并且具有形成在其中的多个第一窗口并排成一行。 通过每个第一窗口在半导体衬底中形成扩散区域。 电极形成为具有与相应的扩散区域接触的区域。 另一电极形成在基板的另一侧。 第二层间电介质形成在第一层间电介质上，使得第二层间电介质不与电极的区域重叠，并且不延伸到该区域的第一周边。
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公开(公告)号：US6064418A
公开(公告)日：2000-05-16
申请号：US57611
申请日：1998-04-09
CPC分类号： H01L33/0008 , B41J2/45 , H01L27/153
摘要： In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.
摘要翻译： 在通过将杂质扩散到半导体衬底中形成的发光二极管的阵列中，二极管在阵列方向上的宽度是阵列间距的十分之五十分之一。 二极管上方的窗口的宽度在阵列间距的十分之三到四分之一之间。 每个二极管的四分之一到四分之一的表面积由与二极管通过窗口接触的电极覆盖。 从阵列端部的发光二极管的中心到基板的边缘的距离在阵列间距的二十五分之一到六百零五分之间。
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公开(公告)号：US5972729A
公开(公告)日：1999-10-26
申请号：US31534
申请日：1998-02-27
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L27/15 , H01L31/10 , H01L33/08 , H01L33/30 , H01L33/44 , H01L33/48 , H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0008 , Y10S438/975
摘要： A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
摘要翻译： 一种制造发光或光接收二极管阵列芯片的方法。 在第一导电类型的衬底上的多个芯片区域中的每一个中形成第一层间电介质。 使用第一层间电介质作为扩散掩模，在衬底中形成第二导电类型的杂质扩散区域。 形成与每个杂质扩散区接触的电极。 分离基板使得多个芯片区域分离为单独的芯片。 在形成杂质扩散区之后，可以在第一层间电介质上形成第二层间电介质。 第二层间电介质形成为使得第二层间电介质不存在于第二区域中，至少在多个窗口中的最后一个窗口附近，基板沿着该第二区域分离成单独的芯片。 可以在层间电介质上形成岛状图案，以将层间电介质保持在基板上。 可以去除第一层间电介质，使得至少在多个窗口中的最后一个窗口附近，第二区域中不存在第一层间电介质。
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公开(公告)号：US5869221A
公开(公告)日：1999-02-09
申请号：US997735
申请日：1997-12-24
CPC分类号： H01L27/153
摘要： A method of fabricating an LED array includes forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; patterning the first insulating film by photolithography to form a plurality of first windows; diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; forming a second insulating film on the first insulating film and the plurality of first windows; patterning the second insulating film by photolithography to-remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; forming a metal film on the second insulating film and the plurality of first windows; and patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.
摘要翻译： 制造LED阵列的方法包括在第一导电类型的半导体衬底上形成由氧化铝构成的第一绝缘膜; 通过光刻图案化第一绝缘膜以形成多个第一窗口; 将通过所述多个第一窗口的第二导电类型的杂质扩散到所述第一绝缘膜中，从而在所述多个第一窗口的下方形成所述第二导电类型的多个扩散区域; 在所述第一绝缘膜和所述多个第一窗口上形成第二绝缘膜; 使用不蚀刻第一绝缘膜的蚀刻剂通过光刻图案化第二绝缘膜以从多个第一窗口去除第二绝缘膜; 在所述第二绝缘膜和所述多个第一窗口上形成金属膜; 并通过光刻法形成金属膜以形成与各个扩散区电接触的多个电极。
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公开(公告)号：US07847304B2
公开(公告)日：2010-12-07
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L29/201
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions. The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。 第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。 第二LED部分发光，其颜色不同于第一LED部分。 第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。
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公开(公告)号：US20070228397A1
公开(公告)日：2007-10-04
申请号：US11692249
申请日：2007-03-28
申请人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
发明人： Masumi Taninaka , Masumi Koizumi , Hiroshi Hamano
IPC分类号： H01L33/00
CPC分类号： B41J2/45 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions fixed to the semiconductor substrate and are disposed corresponding to the first LED portions. The second LED portions emit light whose color is different from the first LED portions The second LED portions are so disposed that active layers of the second LED portions are substantially at the same height as active layers of the first LED portions.
摘要翻译： LED阵列包括半导体衬底和整体地形成在半导体衬底的表面上的多个第一LED部分。 第一LED部分发射预定颜色的光。 LED阵列包括固定到半导体衬底的多个第二LED部分，并且对应于第一LED部分设置。 第二LED部分发射其颜色不同于第一LED部分的光。第二LED部分被布置成使得第二LED部分的有源层与第一LED部分的有源层基本上处于相同的高度。
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10.发明授权Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权低成本，高密度发光二极管阵列及其制造方法公开(公告)号：US06563138B2
公开(公告)日：2003-05-13
申请号：US09750299
申请日：2000-12-29
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译： 在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。 上层通过完全穿过上层的隔离通道分成块。 通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。 每个块具有驱动块中的发光二极管的块电极。 这排发光二极管与穿过隔离通道的多条共用线并联。 每个共享线路连接到不同块中的多个发光二极管。
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