发明授权
- 专利标题: Temperature control for performing heat process on resist film
- 专利标题(中): 对抗蚀膜进行热处理的温度控制
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申请号: US11965093申请日: 2007-12-27
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公开(公告)号: US07755003B2公开(公告)日: 2010-07-13
- 发明人: Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
- 申请人: Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-354776 20061228
- 主分类号: C21D1/40
- IPC分类号: C21D1/40 ; H05B3/68 ; H05B1/02
摘要:
A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.