公开(公告)号：US08670656B2

公开(公告)日：2014-03-11

申请号：US13217080

申请日：2011-08-24

申请人： Toshihiko Nishida ,  Kazuyoshi Eshima ,  Hisakazu Nakayama

发明人： Toshihiko Nishida ,  Kazuyoshi Eshima ,  Hisakazu Nakayama

IPC分类号： F24H1/16 ,  H05B3/42

CPC分类号： H01L21/67051 ,  F24H1/162 ,  F24H9/2028 ,  F24H2250/14 ,  H05B1/0247

摘要： Disclosed are a liquid heating unit capable of monitoring the temperature of the liquid storage tank or pipe in which liquid is heated by transmission of the radiated light, a liquid processing apparatus including the same, and a liquid processing method. The liquid heating unit includes: a lamp heater radiating light; a cylindrical member made of material transmitting the radiated light and having a cylindrical shape in which the lamp heater is able to be inserted and penetrated into an internal space thereof; a liquid pipe placed along an outer periphery of the cylindrical member and configured to heat liquid flowing therein using the radiated light; a reflection plate that covers the liquid pipe from the outside and reflects the radiated light; and a first temperature sensor attached to an outer surface of the reflection plate.

摘要翻译： 公开了一种液体加热单元，其能够通过透射辐射光来监测液体被加热的液体储存罐或管道的温度，包括该液体加热单元的液体处理设备和液体处理方法。 液体加热单元包括：灯加热器，其辐射光; 透射辐射光的材料制成的圆柱形构件，并且具有圆柱形形状，其中灯加热器能够被插入并穿透其内部空间; 沿着所述筒状构件的外周配置的液体管，其构造为使用所述照射光加热在其中流动的液体; 反射板，其从外部覆盖液体管并反射辐射光; 以及附接到反射板的外表面的第一温度传感器。

公开(公告)号：US07755003B2

公开(公告)日：2010-07-13

申请号：US11965093

申请日：2007-12-27

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： C21D1/40 ,  H05B3/68 ,  H05B1/02

CPC分类号： H01L21/67248

摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.

摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。

公开(公告)号：US20080156785A1

公开(公告)日：2008-07-03

申请号：US11965093

申请日：2007-12-27

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： H01L21/00 ,  H05B3/68

CPC分类号： H01L21/67248

摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.

摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。

公开(公告)号：US20120063754A1

公开(公告)日：2012-03-15

申请号：US13217080

申请日：2011-08-24

申请人： Toshihiko Nishida ,  Kazuyoshi Eshima ,  Hisakazu Nakayama

发明人： Toshihiko Nishida ,  Kazuyoshi Eshima ,  Hisakazu Nakayama

IPC分类号： F24H1/16 ,  H05B1/02 ,  F21V7/00

CPC分类号： H01L21/67051 ,  F24H1/162 ,  F24H9/2028 ,  F24H2250/14 ,  H05B1/0247

摘要： Disclosed are a liquid heating unit capable of monitoring the temperature of the liquid storage tank or pipe in which liquid is heated by permeation of the radiated light, a liquid processing apparatus including the same, and a liquid processing method. The liquid heating unit includes: a lamp heater radiating light; a cylindrical member having a cylindrical shape made of material permeating the radiated light configured to insert and penetrate the lamp heater into an internal space; a liquid conduction part placed along an outer periphery of the cylindrical member and configured to heat liquid flowing therein by using the radiated light; a reflection plate covering the liquid conduction part from the outside and reflecting the radiated light; and a first temperature sensor attached to an outer surface of the reflection plate.

摘要翻译： 公开了一种液体加热单元，其能够监测通过辐射光的渗透而加热液体的储液罐或管的温度，包括该液体加热单元的液体处理装置和液体处理方法。 液体加热单元包括：灯加热器，其辐射光; 圆柱形构件，其具有由穿透所述辐射光的材料制成的圆柱形构造，以将灯加热器插入并穿透到内部空间中; 液体传导部件，其沿着所述筒状部件的外周配置，并且通过使用所述照射光来加热在其内流动的液体; 反射板，其从外部覆盖液体传导部分并反射辐射光; 以及附接到反射板的外表面的第一温度传感器。

公开(公告)号：US07868270B2

公开(公告)日：2011-01-11

申请号：US12022522

申请日：2008-01-30

申请人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

发明人： Jun Ookura ,  Eiichi Sekimoto ,  Hisakazu Nakayama

IPC分类号： H05B3/68

CPC分类号： H01L21/67248 ,  H01L21/67178 ,  H01L21/67748

摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

摘要翻译： 在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度， 其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。 所述方法包括：获取调整数据，所述调整数据用于调整由用于将所述基板的温度从初始温度附近的第一温度升至围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。

公开(公告)号：US20080283515A1

公开(公告)日：2008-11-20

申请号：US12022522

申请日：2008-01-30

申请人： Jun OOKURA ,  Eiichi SEKIMOTO ,  Hisakazu NAKAYAMA

发明人： Jun OOKURA ,  Eiichi SEKIMOTO ,  Hisakazu NAKAYAMA

IPC分类号： H05B3/68 ,  F27B9/04

CPC分类号： H01L21/67248 ,  H01L21/67178 ,  H01L21/67748

摘要： A temperature control method is used for controlling a temperature of a hot plate, so that a measured temperature of the hot plate conforms to a target temperature thereof, in a heat processing apparatus for performing a heat process on a substrate placed on the hot plate, which is used in a coating/developing system for applying a resist coating onto the substrate to form a resist film and then performing development on the resist film after light exposure. The method includes acquiring adjustment data necessary for adjusting a reaching time defined by a time period for increasing the temperature of the substrate from a first temperature around an initial temperature to a second temperature around the target temperature; and adjusting the target temperature by use of the adjustment data thus acquired, after starting the process on the substrate.

摘要翻译： 在用于对放置在热板上的基板进行热处理的热处理装置中，使用温度控制方法来控制热板的温度，使得热板的测量温度符合其目标温度， 其用于涂覆/显影系统中，用于将抗蚀剂涂层施加到基底上以形成抗蚀剂膜，然后在曝光后在抗蚀剂膜上进行显影。 所述方法包括：获取调整数据，所述调整数据调整由用于将所述基板的温度从初始温度附近的第一温度提高到围绕所述目标温度的第二温度的时间段所限定的到达时间; 并且在基板上开始处理之后，通过使用这样获得的调整数据来调整目标温度。

公开(公告)号：US06654668B1

公开(公告)日：2003-11-25

申请号：US09502580

申请日：2000-02-11

申请人： Koji Harada ,  Hisakazu Nakayama ,  Jun Ookura

发明人： Koji Harada ,  Hisakazu Nakayama ,  Jun Ookura

IPC分类号： G05D2300

CPC分类号： H01L21/67259 ,  H01L21/67248

摘要： The temperature of a hot plate is not more than a predetermined threshold when a wafer is accurately mounted at a substrate mounting position on the hot plate, whereas the temperature of the hot plate is the predetermined threshold when the wafer is not accurately mounted at the substrate mounting position on the hot plate. Therefore, when the temperature of the hot plate is not less than the predetermined threshold when the wafer is mounted on the hot plate, it is judged that the wafer is stranded on a guide, and an alarm is given by means of a speaker or a display section.

摘要翻译： 当晶片准确地安装在热板上的基板安装位置时，热板的温度不超过预定的阈值，而当热晶片的温度不准确地安装在基板上时，热板的温度是预定的阈值 安装位置在热板上。 因此，当晶片安装在热板上时，当热板的温度不低于预定阈值时，判断晶片搁在引导件上，并通过扬声器或 显示部分。