发明授权
US07755139B2 Power device with high switching speed and manufacturing method thereof
有权
具有高开关速度的功率器件及其制造方法
- 专利标题： Power device with high switching speed and manufacturing method thereof
- 专利标题（中）： 具有高开关速度的功率器件及其制造方法
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申请号： US10557766申请日： 2003-05-19
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公开(公告)号： US07755139B2公开(公告)日： 2010-07-13
- 发明人: Cesare Ronsisvalle
- 申请人： Cesare Ronsisvalle
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Seed IP Law Group PLLC
- 代理商 Lisa K. Jorgenson; Robert Iannucci
- 国际申请： PCT/IT03/00298 WO 20030519
- 国际公布： WO2004/102671 WO 20041125
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A power device is formed by a thyristor and by a MOSFET transistor, series-connected between a first and a second current-conduction terminal. The power device moreover has a control terminal connected to an insulated-gate electrode of the MOSFET transistor and receiving a control voltage for turning on/off the device, and a third current-conduction terminal connected to the thyristor for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reverse-bias safe-operating area.
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