Invention Grant
- Patent Title: Method for producing layers located on a hybrid circuit
- Patent Title (中): 用于制造位于混合电路上的层的方法
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Application No.: US11576056Application Date: 2004-10-13
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Publication No.: US07759261B2Publication Date: 2010-07-20
- Inventor: Francois Marion , Philippe Rambaud , Lydie Mathieu
- Applicant: Francois Marion , Philippe Rambaud , Lydie Mathieu
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- International Application: PCT/FR2004/002603 WO 20041013
- International Announcement: WO2006/040419 WO 20060420
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for obtaining layers defined on a hybrid circuit. The hybrid circuit including a substrate and at least one elementary circuit that includes a first facet and a second facet, being hybridized via the second facet to a facet of the substrate. This facet of the substrate and each elementary circuit are coated with a first layer, the first layer is removed from the first facet of the elementary circuit, the first facet and the subsisting part of the first layer are coated with a second layer, and the subsisting part and the second layer covering it are removed. Such a method may, for example, find application to obtaining an antireflection or metal layer on a chip.
Public/Granted literature
- US20080045037A1 Method for Producing Layers Located on a Hybrid Circuit Public/Granted day:2008-02-21
Information query
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