发明授权
- 专利标题： Charged particle beam writing method
- 专利标题（中）： 带电粒子束写入方式
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申请号： US12193146申请日： 2008-08-18
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公开(公告)号： US07759659B2公开(公告)日： 2010-07-20
- 发明人: Takayuki Abe , Tetsuo Yamaguchi , Fumio Hide
- 申请人： Takayuki Abe , Tetsuo Yamaguchi , Fumio Hide
- 申请人地址： JP Numazu-shi
- 专利权人： NuFlare Technology, Inc.
- 当前专利权人： NuFlare Technology, Inc.
- 当前专利权人地址： JP Numazu-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-222646 20070829
- 主分类号： G21K1/00
- IPC分类号： G21K1/00 ; G21K5/10
摘要：
A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape.
公开/授权文献
- US20090057576A1 CHARGED PARTICLE BEAM WRITING METHOD 公开/授权日：2009-03-05
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