Charged particle beam writing method
    1.
    发明授权
    Charged particle beam writing method 有权
    带电粒子束写入方式

    公开(公告)号:US07759659B2

    公开(公告)日:2010-07-20

    申请号:US12193146

    申请日:2008-08-18

    IPC分类号: G21K1/00 G21K5/10

    摘要: A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape.

    摘要翻译: 写入方法包括通过将第一成形孔和第二成形孔通过到目标工件上来发射形成为第一形状的第一带电粒子束; 并且通过穿过所述第一成形孔和所述第二成形孔而发射形成为第二形状的第二带电粒子束,其中所述第二带电粒子束叠加在由所述第一带电粒子束暴露的相同位置上,并且通过使用 相应的第一和第二成形孔的相对侧与用于第一形状的那些相对。

    CHARGED PARTICLE BEAM WRITING METHOD
    2.
    发明申请
    CHARGED PARTICLE BEAM WRITING METHOD 有权
    充电颗粒光束写字方法

    公开(公告)号:US20090057576A1

    公开(公告)日:2009-03-05

    申请号:US12193146

    申请日:2008-08-18

    IPC分类号: G21K5/10

    摘要: A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape.

    摘要翻译: 写入方法包括通过将第一成形孔和第二成形孔通过到目标工件上来发射形成为第一形状的第一带电粒子束; 并且通过穿过所述第一成形孔和所述第二成形孔而发射形成为第二形状的第二带电粒子束,其中所述第二带电粒子束叠加在由所述第一带电粒子束暴露的相同位置上,并且通过使用 相应的第一和第二成形孔的相对侧与用于第一形状的那些相对。

    Charged particle beam writing method
    3.
    再颁专利
    Charged particle beam writing method 有权
    带电粒子束写入方式

    公开(公告)号:USRE44179E1

    公开(公告)日:2013-04-30

    申请号:US13553354

    申请日:2012-07-19

    IPC分类号: G21K1/00 G21K5/10 H01J37/21

    摘要: A writing method includes emitting a first charged particle beam formed to be a first shape by passing through a first shaping aperture and a second shaping aperture, onto a target workpiece; and emitting a second charged particle beam formed to be a second shape by passing through the first shaping aperture and the second shaping aperture, wherein the second charged particle beam is superimposed onto a same position exposed by the first charged particle beam and is formed by using an opposite sides of respective first and second shaping apertures to those used for the first shape.

    摘要翻译: 写入方法包括通过将第一成形孔和第二成形孔通过到目标工件上来发射形成为第一形状的第一带电粒子束; 并且通过穿过所述第一成形孔和所述第二成形孔而发射形成为第二形状的第二带电粒子束,其中所述第二带电粒子束叠加在由所述第一带电粒子束暴露的相同位置上,并且通过使用 相应的第一和第二成形孔的相对侧与用于第一形状的那些相对。