发明授权
- 专利标题： Method of forming a layer on a wafer
- 专利标题（中）： 在晶片上形成层的方法
-
申请号： US11061407申请日： 2005-02-18
-
公开(公告)号： US07763550B2公开(公告)日： 2010-07-27
- 发明人: Ji-Sang Yahng , Young-Wook Park , Jae-Jong Han , Jum-Soo Chang
- 申请人： Ji-Sang Yahng , Young-Wook Park , Jae-Jong Han , Jum-Soo Chang
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2004-0010879 20040219
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/677 ; C23C16/00
摘要：
A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.
公开/授权文献
- US20050233559A1 Method of forming a layer on a wafer 公开/授权日：2005-10-20
信息查询
IPC分类:
