公开(公告)号：US20050233559A1

公开(公告)日：2005-10-20

申请号：US11061407

申请日：2005-02-18

申请人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

发明人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

IPC分类号： H01L21/31 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67757 ,  Y10S414/136 ,  Y10S414/139

摘要： A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

摘要翻译： 在具有处理室，转印室和晶片舟皿的装置中的半导体晶片上形成层。 其上具有半导体晶片的船在转印室中旋转。 当船旋转时，船在转移室和处理室之间转移，并且反应气体被提供到处理室以在晶片上形成层。

公开(公告)号：US07763550B2

公开(公告)日：2010-07-27

申请号：US11061407

申请日：2005-02-18

申请人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

发明人： Ji-Sang Yahng ,  Young-Wook Park ,  Jae-Jong Han ,  Jum-Soo Chang

IPC分类号： H01L21/31 ,  H01L21/677 ,  C23C16/00

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67757 ,  Y10S414/136 ,  Y10S414/139

摘要： A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.

摘要翻译： 在具有处理室，转印室和晶片舟皿的装置中的半导体晶片上形成层。 其上具有半导体晶片的船在转印室中旋转。 当船旋转时，船在转移室和处理室之间转移，并且反应气体被提供到处理室以在晶片上形成层。

公开(公告)号：US07176049B2

公开(公告)日：2007-02-13

申请号：US10845589

申请日：2004-05-14

申请人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/00

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

公开(公告)号：US07485554B2

公开(公告)日：2009-02-03

申请号：US11655916

申请日：2007-01-22

申请人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Ho Buh ,  Ji-Sang Yahng ,  Yu Gyun Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。

公开(公告)号：US20070117250A1

公开(公告)日：2007-05-24

申请号：US11655916

申请日：2007-01-22

申请人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/00

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。

公开(公告)号：US20050062175A1

公开(公告)日：2005-03-24

申请号：US10845589

申请日：2004-05-14

申请人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

发明人： Gyoung Buh ,  Ji-Sang Yahng ,  Yu Shin ,  Guk-Hyon Yon ,  Sangjin Hyun

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/266 ,  H01L21/268 ,  H01L21/28 ,  H01L21/324 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/76

CPC分类号： H01L21/266 ,  H01L21/2022 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/28211 ,  H01L21/324 ,  H01L21/76232 ,  H01L21/823462 ,  H01L21/823481

摘要： A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

摘要翻译： 选择性地加热半导体衬底的预定区域的方法包括提供半导体衬底，将仅自由载流子产生光选择性地聚焦在半导体衬底的预定区域上，将半导体衬底的预定区域上的自由载流子产生光照射到 增加半导体衬底的预定区域内的自由载流子浓度，其中自由载流子产生光使预定区域的温度升高小于改变预定区域的固相所需的温度，并且将半导体衬底照射 加热光，以选择性地加热半导体衬底的预定区域。