发明授权
- 专利标题： Method for forming a stacked structure of an insulating layer and an organic semiconductor layer, organic field effect transistor and method for making same
- 专利标题（中）： 用于形成绝缘层和有机半导体层的堆叠结构的方法，有机场效应晶体管及其制造方法
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申请号： US11424672申请日： 2006-06-16
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公开(公告)号： US07767488B2公开(公告)日： 2010-08-03
- 发明人: Nobuhide Yoneya
- 申请人： Nobuhide Yoneya
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： K&L Gates LLP
- 优先权： JP2005-186554 20050627
- 主分类号： H01L51/40
- IPC分类号： H01L51/40
摘要：
A method for making an organic field effect transistor of a bottom gate/bottom contact type or a bottom gate/top contact type is provided. The method comprises (a) forming a gate electrode 12 on a support and forming a gate insulating layer 13 on the support 10 and the gate electrode 12, and (b) forming, on the gate insulating layer 13, source/drain electrodes 14 and an organic semiconductor region 15 made of an organic semiconductor material and constituting a channel forming region 16. The gate insulating layer 12 is formed by applying a solution of a mixture of an insulating polymer material and a surface treating agent onto the support 10 and the gate electrode 12 and drying. The organic field effect transistors are also provided.