Invention Grant
US07767502B2 Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate
有权
使用具有保护帽的薄膜晶体管在柔性基板上制造电子器件的方法
- Patent Title: Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate
- Patent Title (中): 使用具有保护帽的薄膜晶体管在柔性基板上制造电子器件的方法
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Application No.: US11702057Application Date: 2007-02-05
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Publication No.: US07767502B2Publication Date: 2010-08-03
- Inventor: Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
- Applicant: Do-young Kim , Wan-jun Park , Young-soo Park , June-key Lee , Yo-sep Min , Jang-yeon Kwon , Sun-ae Seo , Young-min Choi , Soo-doo Chae
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR2002-87940 20021231
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/00
Abstract:
In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
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