Invention Grant
US07767506B2 Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
有权
使用该掩模的半导体器件和薄膜晶体管阵列面板的掩模和制造方法
- Patent Title: Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask
- Patent Title (中): 使用该掩模的半导体器件和薄膜晶体管阵列面板的掩模和制造方法
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Application No.: US12258228Application Date: 2008-10-24
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Publication No.: US07767506B2Publication Date: 2010-08-03
- Inventor: Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
- Applicant: Jong-An Kim , Ji-Haeng Han , Young-Bae Jung , Bae-Hyoun Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co. Ltd.
- Current Assignee: Samsung Electronics Co. Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2004-0105547 20041214; KR10-2005-0049614 20050610
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.
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