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    Thin film transistor array panel and method of manufacturing the same
    7.
    发明申请
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20060160260A1

    公开(公告)日：2006-07-20

    申请号：US11336031

    申请日：2006-01-20

    申请人： Neung-Ho Cho ,  Sung-Wook Kim ,  Yong-Kil Park ,  Bae-Hyoun Jung ,  Dong-Yub Chae ,  Youn-Soo Choi

    发明人： Neung-Ho Cho ,  Sung-Wook Kim ,  Yong-Kil Park ,  Bae-Hyoun Jung ,  Dong-Yub Chae ,  Youn-Soo Choi

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L21/82

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/3244 ,  H01L27/3295 ,  H01L51/5284

    摘要： The present invention provides a method of manufacturing a TFT array panel in a cost-effective manner. The method includes: forming thin film transistors each having a gate electrode, a source electrode, and a drain electrode; forming an insulating layer on the thin film transistors; forming a first conductive layer electrically connected to the drain electrodes on the insulating layer; forming a second conductive layer on the first conductive layer; forming a photoresist layer including first portions and second portions thinner than the first portions; selectively etching the second conductive layer with a first etchant by using the photoresist layer as an etch blocker; and selectively etching the first conductive layer with a second etchant by using the photoresist layer and the second conductive layer as etch blockers.

    摘要翻译： 本发明提供一种以成本有效的方式制造TFT阵列面板的方法。 该方法包括：形成各自具有栅电极，源电极和漏电极的薄膜晶体管; 在薄膜晶体管上形成绝缘层; 形成与绝缘层上的漏电极电连接的第一导电层; 在所述第一导电层上形成第二导电层; 形成包括比所述第一部分更薄的第一部分和第二部分的光致抗蚀剂层; 通过使用光致抗蚀剂层作为蚀刻阻挡剂，用第一蚀刻剂选择性地蚀刻第二导电层; 以及通过使用光致抗蚀剂层和第二导电层作为蚀刻阻挡剂，用第二蚀刻剂选择性地蚀刻第一导电层。

    Thin film transistor array panel and method for fabricating the same
    8.
    发明申请
    Thin film transistor array panel and method for fabricating the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20050012150A1

    公开(公告)日：2005-01-20

    申请号：US10481236

    申请日：2002-06-20

    申请人： Jae-Seong Byun ,  Kun-Jong Lee ,  Hyun-Su Lim ,  Jong-Hwan Cha ,  Bae-Hyoun Jung

    发明人： Jae-Seong Byun ,  Kun-Jong Lee ,  Hyun-Su Lim ,  Jong-Hwan Cha ,  Bae-Hyoun Jung

    IPC分类号： G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00 ,  H01L27/01 ,  H01L31/0392

    CPC分类号： G02F1/13458 ,  G02F1/13439 ,  G02F2001/136236 ,  H01L29/4908

    摘要： The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line extending in a first direction and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer. The data wire includes a data line extending in a second direction and intersecting the gate line, a source electrode connected to the data line while contacting the semiconductor pattern, a drain electrode facing the source electrode while contacting the semiconductor pattern, and a data pad connected to one end of the data line. A passivation layer is formed on the gate insulating layer while exposing the data pad and a portion of the data line close to the data pad.

    摘要翻译： 本发明涉及一种TFT阵列面板及其制造方法。 通过印刷有机绝缘材料形成栅绝缘层和钝化层，以简化制造工艺。 本发明的TFT面板包括绝缘基板和形成在绝缘基板上的栅极线。 栅极线包括沿第一方向延伸的栅极线和连接到栅极线的一端的栅极焊盘。 在绝缘基板上形成栅极绝缘层，同时使栅极焊盘和栅极线的一部分接近栅极焊盘。 在栅极绝缘层上形成半导体图形。 在栅极绝缘层上形成数据线。 数据线包括在第二方向上延伸并且与栅极线相交的数据线，在与半导体图案接触的同时连接到数据线的源电极，与半导体图案接触的面对源电极的漏电极和连接的数据焊盘 到数据线的一端。 在栅极绝缘层上形成钝化层，同时使数据焊盘和数据线的一部分接近数据焊盘。

    Array substrate and display panel
    9.
    发明授权
    Array substrate and display panel 有权
    阵列基板和显示面板

    公开(公告)号：US07781268B2

    公开(公告)日：2010-08-24

    申请号：US11737626

    申请日：2007-04-19

    申请人： Jae-Seong Byun ,  Ho-Min Kang ,  Bae-Hyoun Jung

    发明人： Jae-Seong Byun ,  Ho-Min Kang ,  Bae-Hyoun Jung

    IPC分类号： H01L21/82

    CPC分类号： H01L27/124 ,  H01L27/1288

    摘要： A manufacturing method for an array substrate, comprising forming a gate metal on a base substrate, patterning the gate metal to form a gate part having a gate electrode, a gate line and a gate pad. Then, a gate insulating layer, an active layer and a data metal are sequentially formed on the base substrate to cover the gate part. The data metal is patterned to form a data part having a data electrode, a data pad and a pixel electrode. Then, the exposed portion of the active layer is removed, and the exposed portion of the gate insulation layer is removed. When the data electrode is divided into a source electrode and a drain electrode, a switching device is completed.

    摘要翻译： 一种阵列基板的制造方法，包括在基底基板上形成栅极金属，构图所述栅极金属，形成具有栅极电极，栅极线和栅极焊盘的栅极部分。 然后，在基底基板上依次形成栅极绝缘层，有源层和数据金属，以覆盖栅极部分。 数据金属被图案化以形成具有数据电极，数据焊盘和像素电极的数据部分。 然后，去除有源层的暴露部分，并去除栅极绝缘层的暴露部分。 当数据电极被分成源电极和漏极时，完成开关装置。

    Thin film transistor array panel and method for fabricating the same
    10.
    发明授权
    Thin film transistor array panel and method for fabricating the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US07312470B2

    公开(公告)日：2007-12-25

    申请号：US10481236

    申请日：2002-06-20

    申请人： Jae-Seong Byun ,  Kun-Jong Lee ,  Hyun-Su Lim ,  Jong-Hwan Cha ,  Bae-Hyoun Jung

    发明人： Jae-Seong Byun ,  Kun-Jong Lee ,  Hyun-Su Lim ,  Jong-Hwan Cha ,  Bae-Hyoun Jung

    IPC分类号： H01L29/04

    CPC分类号： G02F1/13458 ,  G02F1/13439 ,  G02F2001/136236 ,  H01L29/4908

    摘要： The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer. The data wire includes a data line, a source electrode connected to the data line, a drain electrode facing the source electrode and a data pad connected to one end of the data line. A passivation layer is formed on the gate insulating layer while exposing the data pad and a portion of the data line close to the data pad.

    摘要翻译： 本发明涉及一种TFT阵列面板及其制造方法。 通过印刷有机绝缘材料形成栅绝缘层和钝化层，以简化制造工艺。 本发明的TFT面板包括绝缘基板和形成在绝缘基板上的栅极线。 栅极线包括连接到栅极线的一端的栅极线和栅极焊盘。 在绝缘基板上形成栅极绝缘层，同时使栅极焊盘和栅极线的一部分接近栅极焊盘。 在栅极绝缘层上形成半导体图形。 在栅极绝缘层上形成数据线。 数据线包括数据线，连接到数据线的源电极，面对源电极的漏电极和连接到数据线的一端的数据焊盘。 在栅极绝缘层上形成钝化层，同时使数据焊盘和数据线的一部分接近数据焊盘。