Invention Grant
US07767593B2 Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress
有权
半导体器件包括由具有增加的固有应力的层间绝缘材料横向包围的场效应晶体管
- Patent Title: Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress
- Patent Title (中): 半导体器件包括由具有增加的固有应力的层间绝缘材料横向包围的场效应晶体管
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Application No.: US12044049Application Date: 2008-03-07
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Publication No.: US07767593B2Publication Date: 2010-08-03
- Inventor: Ralf Richter , Carsten Peters , Juergen Boemmels
- Applicant: Ralf Richter , Carsten Peters , Juergen Boemmels
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102007041220 20070831
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
By appropriately treating an interlayer dielectric material above P-channel transistors, the compressive stress may be significantly enhanced, which may be accomplished by expanding the interlayer dielectric material, for instance, by providing a certain amount of oxidizable species and performing an oxidation process.
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