Invention Grant
US07767926B2 Method and system for dry development of a multi-layer mask using sidewall passivation and mask passivation
有权
用于使用侧壁钝化和掩模钝化的多层掩模的干式显影的方法和系统
- Patent Title: Method and system for dry development of a multi-layer mask using sidewall passivation and mask passivation
- Patent Title (中): 用于使用侧壁钝化和掩模钝化的多层掩模的干式显影的方法和系统
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Application No.: US11391672Application Date: 2006-03-29
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Publication No.: US07767926B2Publication Date: 2010-08-03
- Inventor: Vaidyanathan Balasubramaniam
- Applicant: Vaidyanathan Balasubramaniam
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: B23K10/00
- IPC: B23K10/00
Abstract:
A method and system for the dry development of a multi-layer mask is described. A first passivation gas comprises as an incipient ingredient a hydrocarbon gas, while a second passivation gas comprises as an incipient ingredient an oxygen-containing gas.
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