Nonvolatile single-poly memory device

Invention Grant

US07768059B2 Nonvolatile single-poly memory device 有权

Title translation: 非易失单一多存储器件

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Patent Title: Nonvolatile single-poly memory device
Patent Title (中): 非易失单一多存储器件
Application No.: US11690861

Application Date: 2007-03-26
Publication No.: US07768059B2

Publication Date: 2010-08-03
Inventor: Hsin-Ming Chen , Shih-Chen Wang , Ming-Chou Ho , Shih-Jye Shen
Applicant: Hsin-Ming Chen , Shih-Chen Wang , Ming-Chou Ho , Shih-Jye Shen
Applicant Address: TW Hsinchu Science Park, Hsin-Chu
Assignee: eMemory Technology Inc.
Current Assignee: eMemory Technology Inc.
Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
Agent Winston Hsu
Main IPC: H01L29/788
IPC: H01L29/788

Abstract:

A non-volatile single-poly memory device is disclosed. The non-volatile single-poly memory device includes two mirror symmetric unit cells, which is capable of providing improved data correctness. Further, the non-volatile single-poly memory device is operated at low voltages and is fully compatible with logic processes.

Abstract(Chinese):

公开了一种非易失性单多晶硅存储器件。非易失性单多晶硅存储器件包括两个镜像对称单元单元，其能够提供改进的数据正确性。此外，非易失性单多晶硅存储器件在低电压下操作并且与逻辑工艺完全兼容。

Public/Granted literature

US20070296018A1 NONVOLATILE SINGLE-POLY MEMORY DEVICE Public/Granted day:2007-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的