Invention Grant
- Patent Title: Contact lithography apparatus and method
- Patent Title (中): 接触光刻设备和方法
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Application No.: US11548823Application Date: 2006-10-12
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Publication No.: US07768628B2Publication Date: 2010-08-03
- Inventor: Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
- Applicant: Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G03B27/02
- IPC: G03B27/02 ; G03B27/42 ; G03B27/58 ; G03B27/20 ; G03B27/22 ; H01L21/00

Abstract:
A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
Public/Granted literature
- US20080087636A1 Contact lithography apparatus and method Public/Granted day:2008-04-17
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