Invention Grant
US07768814B2 Method and apparatus for measuring statistics of dram parameters with minimum perturbation to cell layout and environment
失效
用于以最小的细胞布局和环境扰动来测量播放参数统计的方法和装置
- Patent Title: Method and apparatus for measuring statistics of dram parameters with minimum perturbation to cell layout and environment
- Patent Title (中): 用于以最小的细胞布局和环境扰动来测量播放参数统计的方法和装置
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Application No.: US12233856Application Date: 2008-09-19
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Publication No.: US07768814B2Publication Date: 2010-08-03
- Inventor: Kanak B. Argawal , Jerry D. Hayes
- Applicant: Kanak B. Argawal , Jerry D. Hayes
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Suiter Swantz pc llo
- Agent Libby Z. Toub
- Main IPC: G11C11/24
- IPC: G11C11/24
Abstract:
The present invention provides a method for measuring statistics of dynamic random access memory (DRAM) process parameters for improving yield and performance of a DRAM. The basic principles for measuring capacitance are similar to charge based capacitance (CBCM), however the present invention differs in several fundamental aspects. In one embodiment, the method includes receiving a selection of a storage cell of the DRAM; measuring a storage cell capacitance (Ccell) of the storage cell; measuring a local bitline capacitance (Cbl) of the storage cell; measuring a transfer device voltage (VT) of the storage cell; computing a transfer ratio (TR) for the storage cell; and measuring a data retention time for the storage cell.
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