发明授权
- 专利标题： Self-aligned tunneling pocket in field-effect transistors and processes to form same
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申请号： US12228457申请日： 2008-08-13
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公开(公告)号： US07777282B2公开(公告)日： 2010-08-17
- 发明人: Prashant Majhi , Wilman Tsai , Jack Kavalieros , Ravi Pillarisetty , Benjamin Chu-Kung
- 申请人： Prashant Majhi , Wilman Tsai , Jack Kavalieros , Ravi Pillarisetty , Benjamin Chu-Kung
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 John N. Greaves
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94
摘要：
A microelectronic device includes a tunneling pocket within an asymmetrical semiconductive body including source- and drain wells. The tunneling pocket is formed by a self-aligned process by removing a dummy gate electrode from a gate spacer and by implanting the tunneling pocket into the semiconductive body or into an epitaxial film that is part of the semiconductive body.
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