A wafer-level package that employs one or more integrated hydrogen getters within the wafer-level package on a substrate wafer or a cover wafer. The hydrogen getters are provided between and among the integrated circuits on the substrate wafer or the cover wafer, and are deposited during the integrated circuit fabrication process. In one non-limiting embodiment, the substrate wafer is a group III-V semiconductor material, and the hydrogen getter includes a titanium layer, a nickel layer, and a palladium layer.