发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11756941申请日: 2007-06-01
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公开(公告)号: US07777347B2公开(公告)日: 2010-08-17
- 发明人: Hiroshi Kuroda
- 申请人: Hiroshi Kuroda
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, P.C.
- 优先权: JP2006-155658 20060605
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
A first semiconductor chip, a spacer of plane shape, and a second semiconductor chip are put on a module substrate, sequentially. These semiconductor chips have a relation that every side of the first semiconductor chip is shorter than the first side and the second side of the second semiconductor chip, and longer than the third side and the fourth side of the second semiconductor chip. The border of the spacer is parallel to the third side and the fourth side and is placed inside the border of the first semiconductor chip. Even if the second electrode pad of the second semiconductor chip approaches the border of the first semiconductor chip, since a spacer secures space between the border portion of the first semiconductor chip and the second semiconductor chip, the wire combined with the second electrode pad does not contact the first semiconductor chip.
公开/授权文献
- US20070278697A1 SEMICONDUCTOR DEVICE 公开/授权日:2007-12-06
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