发明授权
- 专利标题: Method for fabricating electron emitter
- 专利标题(中): 电子发射器的制造方法
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申请号: US11986851申请日: 2007-11-26
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公开(公告)号: US07780496B2公开(公告)日: 2010-08-24
- 发明人: Peng Liu , Shou-Shan Fan , Liang Liu , Kai-Li Jiang
- 申请人: Peng Liu , Shou-Shan Fan , Liang Liu , Kai-Li Jiang
- 申请人地址: CN Beijing TW Tu-Cheng, Taipei Hsien
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW Tu-Cheng, Taipei Hsien
- 代理商 Jeffrey T. Knapp
- 优先权: CN200610157040 20061124
- 主分类号: H01J9/04
- IPC分类号: H01J9/04 ; H01J1/02 ; H01J1/00 ; H01J9/02 ; H01J63/02
摘要:
A method for fabricating a surface-conduction electron emitter includes the steps of: (a) providing a substrate; (b) disposing two lower layers on the surface of the substrate, the two lower layers are parallel and apart from each other; (c) disposing a plurality of carbon nanotube elements on the lower layers; (d) disposing two upper layers on the two lower layers, and thereby, sandwiching the carbon nanotube elements therebetween; and (e) forming a micro-fissure between the carbon nanotube elements.
公开/授权文献
- US20080227360A1 Method for fabricating electron emitter 公开/授权日:2008-09-18
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