发明授权
- 专利标题: Gas delivery apparatus for atomic layer deposition
- 专利标题(中): 用于原子层沉积的气体输送装置
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申请号: US10281079申请日: 2002-10-25
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公开(公告)号: US07780785B2公开(公告)日: 2010-08-24
- 发明人: Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
- 申请人: Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
摘要:
An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
公开/授权文献
- US20030121608A1 Gas delivery apparatus for atomic layer deposition 公开/授权日:2003-07-03
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