发明授权
- 专利标题: Method of fabricating semiconductor interconnections
- 专利标题(中): 制造半导体互连的方法
-
申请号: US11765006申请日: 2007-06-19
-
公开(公告)号: US07781339B2公开(公告)日: 2010-08-24
- 发明人: Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
- 申请人: Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
- 申请人地址: JP Kobe-shi
- 专利权人: Kobe Steel, Ltd.
- 当前专利权人: Kobe Steel, Ltd.
- 当前专利权人地址: JP Kobe-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-192153 20060712
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/4763
摘要:
A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 μm or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.
公开/授权文献
- US20080014743A1 METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS 公开/授权日:2008-01-17