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发明授权
US07781605B2 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
摘要：
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要（中）：

在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

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