发明授权
- 专利标题： Integrating high-voltage CMOS devices with low-voltage CMOS
- 专利标题（中）： 将高压CMOS器件与低压CMOS集成
-
申请号： US11652182申请日： 2007-01-11
-
公开(公告)号： US07781843B1公开(公告)日： 2010-08-24
- 发明人: James Weaver , S. Jonathan Wang , John Chen , Sadiq Bengali , Edward Enciso , Tom Cooney
- 申请人： James Weaver , S. Jonathan Wang , John Chen , Sadiq Bengali , Edward Enciso , Tom Cooney
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L21/335
- IPC分类号： H01L21/335
摘要：
High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.