公开(公告)号：US07781843B1

公开(公告)日：2010-08-24

申请号：US11652182

申请日：2007-01-11

申请人： James Weaver ,  S. Jonathan Wang ,  John Chen ,  Sadiq Bengali ,  Edward Enciso ,  Tom Cooney

发明人： James Weaver ,  S. Jonathan Wang ,  John Chen ,  Sadiq Bengali ,  Edward Enciso ,  Tom Cooney

IPC分类号： H01L21/335

CPC分类号： H01L21/823418 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/7833

摘要： High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.

摘要翻译： 高压CMOS器件和低电压CMOS器件集成在公共衬底上，通过在至少有源器件区域上形成牺牲膜，光刻地限定高电压CMOS器件的器件有源区，通过牺牲膜选择性地注入掺杂物到 光刻定义的高压CMOS器件的器件有源区，扩散注入的掺杂剂，去除牺牲膜，随后形成低电压CMOS器件。