发明授权
US07786548B2 Electric element, memory device, and semiconductor integrated circuit
有权
电子元件，存储器件和半导体集成电路
- 专利标题： Electric element, memory device, and semiconductor integrated circuit
- 专利标题（中）： 电子元件，存储器件和半导体集成电路
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申请号： US11883481申请日： 2006-10-26
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公开(公告)号： US07786548B2公开(公告)日： 2010-08-31
- 发明人: Koichi Osano , Shunsaku Muraoka , Satoru Mitani , Kumio Nago
- 申请人： Koichi Osano , Shunsaku Muraoka , Satoru Mitani , Kumio Nago
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-369090 20051222
- 国际申请： PCT/JP2006/021387 WO 20061026
- 国际公布： WO2007/072628 WO 20070628
- 主分类号： H01L27/08
- IPC分类号： H01L27/08
摘要：
An electric element includes a first electrode (1), a second electrode (3), and a variable-resistance film (2) connected between the first electrode (1) and the second electrode (3). The variable-resistance film (2) contains Fe (iron) and O (oxygen) as constituent elements. The content of oxygen in the variable-resistance film (2) is modulated along the film thickness direction.
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