Invention Grant
US07789992B2 Neutral beam etching device for separating and accelerating plasma
有权
用于分离和加速等离子体的中性束蚀刻装置
- Patent Title: Neutral beam etching device for separating and accelerating plasma
- Patent Title (中): 用于分离和加速等离子体的中性束蚀刻装置
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Application No.: US11414417Application Date: 2006-05-01
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Publication No.: US07789992B2Publication Date: 2010-09-07
- Inventor: Won-tae Lee
- Applicant: Won-tae Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0063433 20050713
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H05B31/26

Abstract:
A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.
Public/Granted literature
- US20070012403A1 Neutral beam etching device for separating and accelerating plasma Public/Granted day:2007-01-18
Information query
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