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    Impedance matching using electronically variable capacitance and frequency considerations
    4.
    发明授权
    Impedance matching using electronically variable capacitance and frequency considerations 有权

    公开(公告)号：US11315758B2

    公开(公告)日：2022-04-26

    申请号：US16502656

    申请日：2019-07-03

    申请人： Reno Technologies, Inc.

    发明人： Imran Ahmed Bhutta

    IPC分类号： H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H03H7/38 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/285

    摘要： In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an electronically variable capacitor (EVC) and a control circuit. The control circuit is coupled to a sensor configured to detecting an RF parameter. To cause an impedance match between an RF source and a plasma chamber, the control circuit determines, using a match lookup table with a value based on the detected RF parameter, a match combination of a new EVC configuration for providing a new EVC capacitance, and a new source frequency for the RF source. The control circuit then alters the EVC to the new EVC configuration, and alters the variable frequency of the RF source to the new source frequency.

    Ion source with biased extraction plate
    6.
    发明授权
    Ion source with biased extraction plate 有权

    公开(公告)号：US10923306B2

    公开(公告)日：2021-02-16

    申请号：US16351956

    申请日：2019-03-13

    申请人： Applied Materials, Inc.

    发明人： Svetlana B. Radovanov ,  Bon-Woong Koo ,  Alexandre Likhanskii

    IPC分类号： H05B31/26 ,  H01J7/24 ,  H01J27/02 ,  H01J27/08

    摘要： An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

    Impedance matching using independent capacitance and frequency control
    7.
    发明授权
    Impedance matching using independent capacitance and frequency control 有权

    公开(公告)号：US10727029B2

    公开(公告)日：2020-07-28

    申请号：US16524805

    申请日：2019-07-29

    申请人： Reno Tchnologies, Inc.

    发明人： Michael Gilliam Ulrich ,  Imran Ahmed Bhutta

    IPC分类号： H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

    摘要： In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an RF input coupled to an RF source, an RF output coupled to a plasma chamber, and an electronically variable capacitor (EVC). A first control circuit controls the EVC and is separate and distinct from a second control circuit controlling the RF source. To assist in causing an impedance match between the RF source and the plasma chamber, the first control circuit determines, using a match lookup table with a value based on a detected RF parameter, a new EVC configuration for providing a new EVC capacitance. To further cause the impedance match, the second control circuit alters the variable frequency of the RF source, but operates independently from the first control circuit.

    Plasma generator
    9.
    发明授权
    Plasma generator 有权

    公开(公告)号：US10115569B2

    公开(公告)日：2018-10-30

    申请号：US15487985

    申请日：2017-04-14

    申请人： JEHARA CORPORATION

    发明人： Hongseub Kim

    IPC分类号： H01J7/24 ,  H05B31/26 ,  H01J37/32

    摘要： Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.

    Plasma processing apparatus and plasma processing method
    10.
    发明授权
    Plasma processing apparatus and plasma processing method 有权

    公开(公告)号：US09859101B2

    公开(公告)日：2018-01-02

    申请号：US15591197

    申请日：2017-05-10

    申请人： TOKYO ELECTRON LIMITED

    发明人： Shinji Kubota

    IPC分类号： H05B31/26 ,  H01J37/32

    CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32816

    摘要： A plasma processing apparatus includes a processing chamber, a carrier wave group generation unit and a plasma generation unit. The carrier wave group generation unit is configured to generate a carrier wave group including a plurality of carrier waves having different frequencies in a frequency domain. The carrier wave group is represented by an amplitude waveform in which a first peak and a second peak of which absolute value is smaller than an absolute value of the first peak alternately appear in a time domain. The plasma generation unit is configured to generate a plasma in the processing chamber by using the carrier wave group.