Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11511277Application Date: 2006-08-29
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Publication No.: US07790568B2Publication Date: 2010-09-07
- Inventor: Tomohiro Okamura
- Applicant: Tomohiro Okamura
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, P.L.L.C.
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for fabricating a semiconductor device includes: providing a semiconductor substrate; forming a STI region on the semiconductor substrate; forming a channel region on the semiconductor substrate; implanting impurities into the STI region; and performing a thermal treatment to diffuse impurities to a side of the channel region.
Public/Granted literature
- US20080057668A1 Method for fabricating semiconductor device Public/Granted day:2008-03-06
Information query
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