发明授权
- 专利标题： Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film
- 专利标题（中）： 半导体装置及其制造方法以及金属化合物薄膜的制造方法
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申请号： US12001381申请日： 2007-12-11
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公开(公告)号： US07790627B2公开(公告)日： 2010-09-07
- 发明人: Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
- 申请人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
- 申请人地址： JP
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2003-083687 20030325
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/4763 ; H01L21/461 ; H01L21/302 ; H01L21/469
摘要：
A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
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