Invention Grant
US07791041B2 Ion source, ion implantation apparatus, and ion implantation method
有权
离子源,离子注入装置和离子注入方法
- Patent Title: Ion source, ion implantation apparatus, and ion implantation method
- Patent Title (中): 离子源,离子注入装置和离子注入方法
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Application No.: US12233151Application Date: 2008-09-18
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Publication No.: US07791041B2Publication Date: 2010-09-07
- Inventor: Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
- Applicant: Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Osha • Liang LLP
- Priority: JP2007-243308 20070920
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J27/02 ; H01J27/08

Abstract:
This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.
Public/Granted literature
- US20090078890A1 ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD Public/Granted day:2009-03-26
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