发明授权
US07791959B2 Memory integrated circuit device providing improved operation speed at lower temperature
有权
存储器集成电路器件在较低温度下提供更好的操作速度
- 专利标题： Memory integrated circuit device providing improved operation speed at lower temperature
- 专利标题（中）： 存储器集成电路器件在较低温度下提供更好的操作速度
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申请号： US11708321申请日： 2007-02-21
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公开(公告)号： US07791959B2公开(公告)日： 2010-09-07
- 发明人: Ki-Chul Chun
- 申请人： Ki-Chul Chun
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2006-0016685 20060221
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
A memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first voltage adjusting unit may be configured to output a voltage based on an output signal of the temperature sensing unit such that the voltage output changes based on changes in a sensed temperature. The MOS back bias voltage outputting unit may be configured to receive the voltage output by the voltage adjusting unit and configured to output the MOS back bias voltage based on the voltage output by the first voltage adjusting unit.
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