Invention Grant
US07794544B2 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
有权
控制气流和输送以抑制MOCVD / ALD系统中颗粒的形成
- Patent Title: Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
- Patent Title (中): 控制气流和输送以抑制MOCVD / ALD系统中颗粒的形成
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Application No.: US11925684Application Date: 2007-10-26
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Publication No.: US07794544B2Publication Date: 2010-09-14
- Inventor: Son T. Nguyen , Kedarnath Sangam , Miriam Schwartz , Kenric Choi , Sanjay Bhat , Pravin K. Narwankar , Shreyas Kher , Rahul Sharangapani , Shankar Muthukrishnan , Paul Deaton
- Applicant: Son T. Nguyen , Kedarnath Sangam , Miriam Schwartz , Kenric Choi , Sanjay Bhat , Pravin K. Narwankar , Shreyas Kher , Rahul Sharangapani , Shankar Muthukrishnan , Paul Deaton
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; E03B1/00 ; F17D1/00 ; F15C1/16

Abstract:
The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.
Public/Granted literature
- US20080041307A1 CONTROL OF GAS FLOW AND DELIVERY TO SUPPRESS THE FORMATION OF PARTICLES IN AN MOCVD/ALD SYSTEM Public/Granted day:2008-02-21
Information query
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