发明授权
- 专利标题： Method of measuring film thickness and method of manufacturing semiconductor device
- 专利标题（中）： 测量膜厚度的方法和制造半导体器件的方法
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申请号： US11409269申请日： 2006-04-24
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公开(公告)号： US07795048B2公开(公告)日： 2010-09-14
- 发明人: Kazutoshi Izumi , Tetsuya Takeuchi
- 申请人： Kazutoshi Izumi , Tetsuya Takeuchi
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2005-375678 20051227
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.
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