公开(公告)号：US07960227B2

公开(公告)日：2011-06-14

申请号：US12543179

申请日：2009-08-18

申请人： Yasuhiro Hayashi ,  Kazutoshi Izumi

发明人： Yasuhiro Hayashi ,  Kazutoshi Izumi

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.

摘要翻译： 在通过干蚀刻在层间绝缘膜中形成通向导电铁电电容器结构的第一通孔之后，在氢扩散防止膜中形成用于暴露部分铁电电容器结构的第二通孔，以便与第一通孔 通过湿蚀刻形成通孔，并且形成由第一通孔和第二通孔构成的通孔，彼此连通。

公开(公告)号：US20070232016A1

公开(公告)日：2007-10-04

申请号：US11495769

申请日：2006-07-31

申请人： Yasuhiro Hayashi ,  Kazutoshi Izumi

发明人： Yasuhiro Hayashi ,  Kazutoshi Izumi

IPC分类号： H01L21/20

CPC分类号： H01L27/105 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76804 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.

摘要翻译： 在通过干蚀刻在层间绝缘膜中形成通向导电铁电电容器结构的第一通孔之后，在氢扩散防止膜中形成用于暴露部分铁电电容器结构的第二通孔，以便与第一通孔 通过湿蚀刻形成通孔，并且形成由第一通孔和第二通孔构成的通孔，彼此连通。

公开(公告)号：US20070148791A1

公开(公告)日：2007-06-28

申请号：US11409269

申请日：2006-04-24

申请人： Kazutoshi Izumi ,  Tetsuya Takeuchi

发明人： Kazutoshi Izumi ,  Tetsuya Takeuchi

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.

摘要翻译： 公开了一种测量薄膜厚度的方法。 该方法包括在基板上形成铁电电容器的步骤，形成绝缘膜以覆盖铁电电容器的步骤，以及光学测量铁电体电容器的电极上的绝缘膜的厚度的步骤。

公开(公告)号：US20060278954A1

公开(公告)日：2006-12-14

申请号：US11229075

申请日：2005-09-19

申请人： Kazutoshi Izumi

发明人： Kazutoshi Izumi

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： H01L21/31612 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： An interlayer insulating film made of insulating material is formed on a semiconductor substrate. A hydrogen diffusion barrier film is formed on the interlayer insulating film, the hydrogen diffusion barrier film being made of material having a higher hydrogen diffusion barrier function than a hydrogen diffusion barrier function of material of the interlayer insulating film. The semiconductor substrate formed with the interlayer insulating film and hydrogen diffusion barrier film is thermally treated. In the process of forming the interlayer insulating film, the interlayer insulating film is formed under the condition that a moisture content becomes 5×10−3 g/cm3 or lower. Even if annealing is performed after the hydrogen diffusion barrier film is formed, a crack is hard to be formed in the underlying interlayer insulating film.

摘要翻译： 在半导体衬底上形成由绝缘材料制成的层间绝缘膜。 在层间绝缘膜上形成氢扩散阻挡膜，氢扩散阻挡膜由具有比层间绝缘膜的材料的氢扩散阻挡功能更高的氢扩散阻挡功能的材料制成。 用层间绝缘膜和氢扩散阻挡膜形成的半导体衬底进行热处理。 在形成层间绝缘膜的过程中，在水分含量变为5×10 -3 / 3以上的条件下形成层间绝缘膜。 即使在形成氢扩散阻挡膜之后进行退火，在下面的层间绝缘膜中难以形成裂纹。

公开(公告)号：US5976973A

公开(公告)日：1999-11-02

申请号：US948329

申请日：1997-10-10

申请人： Koichiro Ohira ,  Katsuyuki Karakawa ,  Kazutoshi Izumi ,  Masahiko Doki

发明人： Koichiro Ohira ,  Katsuyuki Karakawa ,  Kazutoshi Izumi ,  Masahiko Doki

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L21/30

CPC分类号： H01L21/02071 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/31051 ,  Y10S438/906

摘要： A method of manufacturing a semiconductor device has the steps of: forming a wiring pattern by dry etching a wiring layer on a semiconductor substrate, using a resist pattern as a mask; immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching; then, processing the wiring pattern with fluid not containing amine and being capable of removing deposition residues; forming a conformal insulating layer on the processed wiring pattern; and forming an insulating layer having a planarizing function on the conformal insulating layer by CVD. This method is suitable for multi-layer wiring, and can form an interlayer insulating film having a satisfactory planarizing function.

摘要翻译： 制造半导体器件的方法包括以下步骤：通过使用抗蚀剂图案作为掩模，在半导体衬底上干蚀刻布线层来形成布线图案; 将布线图案浸入含胺液体中以除去在干蚀刻期间形成的沉积残留物; 然后用不含胺的流体处理布线图案，并且能够去除沉积残余物; 在所述经处理的布线图案上形成保形绝缘层; 以及通过CVD在保形绝缘层上形成具有平坦化功能的绝缘层。 该方法适用于多层布线，并且可以形成具有令人满意的平坦化功能的层间绝缘膜。

公开(公告)号：US08324671B2

公开(公告)日：2012-12-04

申请号：US12068912

申请日：2008-02-13

申请人： Aki Dote ,  Kazutoshi Izumi

发明人： Aki Dote ,  Kazutoshi Izumi

IPC分类号： H01L29/92

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

摘要： A semiconductor device has a ferroelectric capacitor having a ferroelectric film, an interlayer insulating film having a first layer formed on the ferroelectric capacitor, a plug and a wiring connecting to the ferroelectric capacitor, and a dummy plug in the vicinity of the ferroelectric capacitor.

摘要翻译： 半导体器件具有铁电电容器，具有在铁电电容器上形成的第一层的层间绝缘膜，与铁电电容器连接的布线和在铁电电容器附近的虚拟插头的铁电体电容器。

公开(公告)号：US08183109B2

公开(公告)日：2012-05-22

申请号：US12731538

申请日：2010-03-25

申请人： Kazutoshi Izumi ,  Kouichi Koseko

发明人： Kazutoshi Izumi ,  Kouichi Koseko

IPC分类号： H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括以下步骤：形成覆盖电容器的氢扩散防止绝缘膜; 在氢扩散防止绝缘膜上形成电容器保护绝缘膜; 并且通过等离子体CVD法在电容器保护绝缘膜上形成第一绝缘膜，其中，当向半导体衬底施加高频偏置电力时，将等离子体产生的高频电力施加到含氧的第一沉积气体 和硅化合物气体。 在该方法中，作为电容器保护用绝缘膜的成膜条件，采用电容器保护绝缘膜中的含水量比第一绝缘膜小的条件。

公开(公告)号：US07795048B2

公开(公告)日：2010-09-14

申请号：US11409269

申请日：2006-04-24

申请人： Kazutoshi Izumi ,  Tetsuya Takeuchi

发明人： Kazutoshi Izumi ,  Tetsuya Takeuchi

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.

摘要翻译： 公开了一种测量薄膜厚度的方法。 该方法包括在基板上形成铁电电容器的步骤，形成绝缘膜以覆盖铁电电容器的步骤，以及光学测量铁电体电容器的电极上的绝缘膜的厚度的步骤。

公开(公告)号：US20100184240A1

公开(公告)日：2010-07-22

申请号：US12731538

申请日：2010-03-25

申请人： Kazutoshi IZUMI ,  Kouichi KOSEKO

发明人： Kazutoshi IZUMI ,  Kouichi KOSEKO

IPC分类号： H01L21/02

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括以下步骤：形成覆盖电容器的氢扩散防止绝缘膜; 在氢扩散防止绝缘膜上形成电容器保护绝缘膜; 并且通过等离子体CVD法在电容器保护绝缘膜上形成第一绝缘膜，其中，当向半导体衬底施加高频偏置电力时，将等离子体产生的高频电力施加到含氧的第一沉积气体 和硅化合物气体。 在该方法中，作为电容器保护用绝缘膜的成膜条件，采用电容器保护绝缘膜中的含水量比第一绝缘膜小的条件。

公开(公告)号：US20070173011A1

公开(公告)日：2007-07-26

申请号：US11398641

申请日：2006-04-06

申请人： Kazutoshi Izumi ,  Kouichi Koseko

发明人： Kazutoshi Izumi ,  Kouichi Koseko

IPC分类号： H01L21/8244

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括以下步骤：形成覆盖电容器的氢扩散防止绝缘膜; 在氢扩散防止绝缘膜上形成电容器保护绝缘膜; 并且通过等离子体CVD法在电容器保护绝缘膜上形成第一绝缘膜，其中，当向半导体衬底施加高频偏置电力时，将等离子体产生的高频电力施加到含氧的第一沉积气体 和硅化合物气体。 在该方法中，作为电容器保护用绝缘膜的成膜条件，采用电容器保护绝缘膜中的含水量比第一绝缘膜小的条件。