发明授权
- 专利标题: Method of forming an integrated circuit with two types of transistors
- 专利标题(中): 用两种晶体管形成集成电路的方法
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申请号: US11647602申请日: 2006-12-29
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公开(公告)号: US07795096B2公开(公告)日: 2010-09-14
- 发明人: Peng-Fei Wang
- 申请人: Peng-Fei Wang
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Edell, Shapiro & Finnan, LLC
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
An integrated circuit includes a transistor of a first type with a first gate electrode and a transistor of a second type with a second gate electrode. The first gate electrode is formed in a first gate groove that is defined in a semiconductor substrate, and the second gate electrode is formed in a second gate groove defined in the semiconductor substrate. The first gate electrode completely fills a space between two adjacent first isolation trenches, and the second gate electrode partially fills a space between two adjacent second isolation trenches, with substrate portions being arranged between the second gate electrode and the adjacent second isolation trenches, respectively.
公开/授权文献
- US20080157211A1 Integrated circuit and method of forming the same 公开/授权日:2008-07-03